2·h-1，隨著氧化時(shí)間的延長(zhǎng)，TGO厚度先快速增加，后緩慢增加；經(jīng)1150 ℃靜態(tài)氧化實(shí)驗(yàn)后，帶孔涂層TGO生長(zhǎng)速率常數(shù)為1.26 μm2·h-1，略大于無(wú)孔涂層，氧化100 h后，陶瓷層和粘結(jié)層界面處的TGO厚度為11.610 μm，與無(wú)孔涂層接近。研究結(jié)果表明，隨著氧化溫度的提高，帶孔涂層陶瓷層和粘結(jié)層界面處的TGO生長(zhǎng)速率顯著提升，氧化進(jìn)程加快。相同氧化溫度條件下，氣膜孔在短時(shí)氧化過(guò)程中加快了TGO的生長(zhǎng)速率，對(duì)于TGO在100 h氧化后的厚度影響不大。;Aiming to explore the oxidation mechanism of thermal barrier coatings with air-film cooling holes, in this research, femtosecond laser was used to prepare the thermal barrier coatings with air-film cooling holes. The microscopic morphology of the air-film cooling holes was observed, and the static oxidation of the perforated thermal barrier coatings was studied at 1000 and 1150 ℃. The growth rate constant of thermally grown oxide (TGO) of the perforated coating is 0.372 μm2·h-1 after the static oxidation at 1000 ℃. The thickness of TGO is increased rapidly and then slowly with the prolongation of the oxidation time. After the static oxidation at 1150 ℃, the growth rate constant of TGO of the perforated coating is 1.26 μm2·h-1, which is slightly larger than that of the unprocessed coating. After oxidation for 100 h, the thickness of TGO at the interface of the ceramic layer and the bonding layer is 11.610 μm, which is close to that of the unprocessed coating. The results show that the growth rate of TGO at the interface of the ceramic layer and the bonding layer is significantly increased and the oxidation process is accelerated with the increase in oxidation temperature. At the same oxidation temperature, the air-film cooling holes accelerate the growth rate of TGO during the short-time oxidation process, which has little effect on the thickness of TGO after oxidation for 100 h."/>