3 nanostructures were prepared by a sol-gel method combined with chemical vapor reaction. And BaZr1-xFexS3 magnetic semiconductor was obtained by doping method. The structure, optical and magnetic properties were studied. The results show that the oxide perovskite BaZrO3 can still exhibit a perovskite structure after vulcanization, that is, replacing O element with S element. And the sulfide treatment can reduce the band gap width of the sample. At the same time, 3d transition metal elements with localized magnetic moment, such as Fe, are used for cation doping of perovskite B site. The band gap width of the samples can also be systematically regulated by controlling the doping amount of Fe. In particular, the BaZr99.7Fe0.03S3 and BaZr99.5Fe0.05S3 exhibit room temperature ferromagnetism."/>
College of Chemistry and Materials,Taiyuan Normal University
[Deng Chenhua, Chen Yajing, Zhu Zhaorong, Fan Shirong, Duan Huiting, Yang Pengxia. Preparation and Study of Fe-Doped BaZrS3 Magnetic Semiconductors[J]. Rare Metal Materials and Engineering,2023,52(8):2800~2804.]
DOI:10.12442/j. issn.1002-185X.20220801