最新色国产精品精品视频,中文字幕日韩一区二区不卡,亚洲有码转帖,夜夜躁日日躁狠狠久久av,中国凸偷窥xxxx自由视频

Silicon quantum dots (Si QDs) with dot density up to 9×1013 cm-2 in amorphous SixC (x>1) thin films were obtained by magnetron sputtering deposition and post-annealing process at 1100 oC. Photoluminescence measurement indicates a multi-band configuration in the range from ultraviolet to green (2.3~3.5 eV). The analysis of Stokes shift and HRTEM demonstrates that there exist two kinds of Si QDs embedded in silicon carbide dielectric matrix: α-Si QDs and c-Si QDs which show the multi-band characteristics. The photoluminescence is closely related with the microstructure size distribution of Si QDs from 1.0 to 4.0 nm. Moreover, the density and the size distribution of Si QDs can be improved further by optimizing the ratio of Si/C atoms as well as annealing parameters. This opens a route to fabricate all-Si tandem solar cell