Abstract:Gallium oxide (β-Ga2O3) nanomaterials have been prepared from gallium and oxygen by thermal evaporation in argon atmosphere, and the electrical transport properties have been examined at high temperature. X-ray diffraction (XRD) reveals that the synthesized products are monoclinic gallium oxide, and it is further confirmed by electron diffraction of transmission electron microscope (TEM). The observation of scanning electron microscope (SEM) reveals that β-Ga2O3 nanobelt width is less than 100 nm and the length is several micrometers. The electricity property was studied at different high temperatures