TC區(qū)域,電阻率、磁電阻都隨溫度的升高而迅速下降,樣品在高溫(TC附近及T>TC區(qū)域)的這一行為可用雙交換(DE)模型與非磁無(wú)序來(lái)說(shuō)明。通過(guò)摻雜研究發(fā)現(xiàn),摻雜量x為0.55,0.60的2種樣品在室溫下具有較大的磁電阻,在B=1.2T時(shí)分別達(dá)到14.5%和19.5%。"/>

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Colossal Magnetoresistance Properties in Series of Two- Element- Doped
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O482.5

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[La. Colossal Magnetoresistance Properties in Series of Two- Element- Doped[J]. Rare Metal Materials and Engineering,2003,(8):615~620.]
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  • Revised:January 26,2002
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