2O3磨料顆粒、α-纖維素和磁性流體制備MCF漿料。首先，通過設(shè)計(jì)用于產(chǎn)生旋轉(zhuǎn)磁場(chǎng)的MCF單元，建立了拋光裝置。然后，對(duì)GaAs晶片表面進(jìn)行了點(diǎn)拋光實(shí)驗(yàn)，以闡明MCF成分對(duì)不同拋光位置的表面粗糙度Ra和材料去除（MR）的影響。最后，使用含有不同直徑顆粒的水基MCF漿料進(jìn)行了掃描拋光實(shí)驗(yàn)。結(jié)果表明，在點(diǎn)拋光的情況下，水基和油基MCF處理后的初始表面粗糙度從954.07 nm分別降至1.02和20.06 nm。此外，MR的深度隨著拋光時(shí)間的增加而線性增加。使用水基MCF的MR深度是使用油基MCF拋光的2.5倍。同時(shí)，拋光區(qū)的橫截面輪廓顯示出W型，這表明點(diǎn)拋光工件表面的MR不均勻。通過掃描拋光，拋光區(qū)的橫截面輪廓顯示出U型，這表明在給定的實(shí)驗(yàn)條件下，無論使用何種MCF，MR都是均勻的。使用含有直徑為0.3 μm的磨粒的MCF能夠獲得Ra為0.82 nm的最光滑工作表面，同時(shí)MR速率為13.5 μm/h。;The effect of magnetic compound fluid (MCF) slurry on the gallium arsenide (GaAs) wafer surface after nano-precision polishing was investigated. MCF slurry was prepared by mixing CS carbonyl iron particles (CIPs), Al2O3 abrasive particles, α-cellulose, and magnetic fluid. Firstly, a polishing device was assembled by designing MCF unit for the generation of revolving magnetic field. Then, the spot polishing experiments were performed on GaAs wafer surface to clarify the effects of MCF components on the surface roughness Ra and material removal (MR) at different polishing positions. Finally, the scanning polishing experiments were conducted using water-based MCF slurry containing particles with different diameters. Results show that after spot polishing with water-based and oil-based MCFs, the initial surface roughness Ra of 954.07 nm decreases to 1.02 and 20.06 nm, respectively. Additionally, the depth of MR is increased linearly with prolonging the polishing time. It is worth noting that the MR depth of surface after polishing with water-based MCF is 2.5 times higher than that with oil-based MCF. Meanwhile, the cross-section profile of the polished zone shows the W shape, which indicates the non-uniform MR on the workpiece surface after spot polishing. After scanning polishing, the cross-section profile of the polished zone shows the U shape, which indicates that MR is uniform under specific experiment conditions, regardless of the MCF types. The smoothest work surface with Ra=0.82 nm is achieved using MCF with abrasive particles of 0.3 μm in diameter, and MR rate is 13.5 μm/h."/>