2+添加可促進(jìn)納米棒的結(jié)晶及沿c軸取向生長(zhǎng),補(bǔ)償本征缺陷。所制備的CZO NRF/CZO TF雙層器件具有雙極性阻變特性,限制電流對(duì)其I-V特性和保持特性影響較大,限制電流較小時(shí),器件的開(kāi)關(guān)比會(huì)降低。當(dāng)ICC分別為10mA和1mA時(shí),開(kāi)關(guān)比的平均值分別為7460和45。與CZO TF單層器件相比,SET電壓分布和高低阻值的穩(wěn)定性均獲得明顯改善,VSET分布在+0.3～1.55V之間,HRS≈7.05×105～2.1×106Ω,LRS≈134Ω。CZO納米棒為導(dǎo)電細(xì)絲的形成提供了大量氧空位,使導(dǎo)電細(xì)絲排列整齊、尺寸更均勻,降低了導(dǎo)電細(xì)絲形成的隨機(jī)性。"/>

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Cu摻雜的ZnO納米棒陣列膜的結(jié)構(gòu)與阻變性能
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華南理工大學(xué),華南理工大學(xué),華南理工大學(xué)

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廣東省科技計(jì)劃項(xiàng)目(No. 2007A010500012,2013A011401010)


Structure and resistive switching behaviors of Cu doped ZnO nanorod array films
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South China University of Technology,South China University of Technology,South China University of Technology

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    摘要:

    以Cu摻雜的ZnO(Cu：ZnO,CZO)薄膜(Thin film,TF)為緩沖層、以水熱法制備了CZO納米棒陣列膜(Nanorods film,NRF),研究了CZO NRF的結(jié)構(gòu)與阻變特性。少量Cu2+添加可促進(jìn)納米棒的結(jié)晶及沿c軸取向生長(zhǎng),補(bǔ)償本征缺陷。所制備的CZO NRF/CZO TF雙層器件具有雙極性阻變特性,限制電流對(duì)其I-V特性和保持特性影響較大,限制電流較小時(shí),器件的開(kāi)關(guān)比會(huì)降低。當(dāng)ICC分別為10mA和1mA時(shí),開(kāi)關(guān)比的平均值分別為7460和45。與CZO TF單層器件相比,SET電壓分布和高低阻值的穩(wěn)定性均獲得明顯改善,VSET分布在+0.3～1.55V之間,HRS≈7.05×105～2.1×106Ω,LRS≈134Ω。CZO納米棒為導(dǎo)電細(xì)絲的形成提供了大量氧空位,使導(dǎo)電細(xì)絲排列整齊、尺寸更均勻,降低了導(dǎo)電細(xì)絲形成的隨機(jī)性。

    Abstract:

    Cu doped ZnO(CZO)Nanorod films (NRF) are fabricated on CZO thin films (TF) coated FTO substrates by the hydrothermal method, and the microstructure and resistive switching characteristics are further investigated.The doping of Cu2+ helps to improve the quality of crystallization and the oriented growth of nanorods along c axis, in the meantime, effectively compensates the intrinsic defects of nanorods. The prepared CZO NRF/CZO TF devices exhibit bipolar resistive switching behaviors. The compliance current has a great effect on I-V curves and retention performance, and the OFF/ON ratio decreases under a low value of ICC. The mean OFF/ON ratios are 7460 and 45 respectively when ICC=10mA and 1mA. Compared with the CZO TF devices, CZO NRF/CZO TF devices show narrow distribution of VSET and good stability of HRS and LRS, with the VSET of +0.3～1.55V, HRS of 7.05×105～2.1×106Ω and LRS of ≈134Ω. CZO nanorods provide large quantities of oxygen vacancy for the formation of conductive filaments with orderly arrangement and uniform size.

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花浩鏹,何新華,符小藝. Cu摻雜的ZnO納米棒陣列膜的結(jié)構(gòu)與阻變性能[J].稀有金屬材料與工程,2018,47(S2):218~222.[Hua Hao-qiang, He Xin-hua, Fu Xiao-yi. Structure and resistive switching behaviors of Cu doped ZnO nanorod array films[J]. Rare Metal Materials and Engineering,2018,47(S2):218~222.]
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  • 收稿日期:2017-11-29
  • 最后修改日期:2017-11-29
  • 錄用日期:2018-02-01
  • 在線發(fā)布日期: 2018-11-01
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