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ITO靶刻蝕時間對沉積ITO薄膜光電性能的影響
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喀什大學 物理與電氣工程學院，新疆 喀什 844006

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新疆維吾爾自治區(qū)自然科學基金


Effect of Etching Time of ITO Targets on Electrical and Optical Properties of Deposited ITO Films
Author:
Affiliation:

School of Physics and Electrical Engineering, Kashi University, Kashi 844006, China

Fund Project:

Natural Science Foundation of Xinjiang Province (2020D01A08)

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    摘要:

    在磁控濺射過程中，通過觀察在2~50 h的刻蝕時間下制備的ITO薄膜的表面形貌，研究了在磁控濺射過程中ITO靶表面的黑色凸起的形成過程，并探討了刻蝕時間對沉積ITO薄膜的光電性能的影響。結(jié)果表明，隨著刻蝕時間的增長，ITO靶材表面的In和Sn分布發(fā)生變化，導致ITO膜不均勻。薄膜的電學和光學性能因結(jié)節(jié)的形成而顯著退化。而當刻蝕時間在40 h以下時，ITO薄膜的光電性能變化不大。然而，當蝕刻時間繼續(xù)延長，薄膜的光電性能會迅速惡化。

    Abstract:

    The formation process of nodules (small black projections) on the surface of tin-doped In2O3 (ITO) targets during magnetron sputtering was studied by observing the surface morphologies of ITO films prepared within etching time of 2?50 h. The effects of etching time on the electrical and optical properties of the deposited ITO films were explored. Results show that the distribution of In and Sn on the surfaces of the ITO targets changes with the etching time, resulting in uneven ITO films. The electrical and optical properties of the films are degraded significantly due to nodule formation. The photoelectric properties of the ITO films are not affected significantly by etching time within 40 h. However, a rapid deterioration is recorded when longer etching time is applied.

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楊淑敏,謝斌,張偉,孔維靜.ITO靶刻蝕時間對沉積ITO薄膜光電性能的影響[J].稀有金屬材料與工程,2023,52(2):478~485.[Yang Shumin, Xie Bin, Zhang Wei, Kong Weijing. Effect of Etching Time of ITO Targets on Electrical and Optical Properties of Deposited ITO Films[J]. Rare Metal Materials and Engineering,2023,52(2):478~485.]
DOI：10.12442/j. issn.1002-185X. E20220013

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  • 收稿日期:2022-05-31
  • 最后修改日期:2023-02-07
  • 錄用日期:2022-11-09
  • 在線發(fā)布日期: 2023-03-03
  • 出版日期: 2023-02-28