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In this study, the effects of zirconium (Zr) and chromium (Cr) elements doping on the structure and properties of Copper (Cu) interconnection thin films were investigated. Cu, Cu (Zr), Cu (Cr), and Cu (ZrCr) interconnection films were deposited on SiO₂/Si substrates by direct current (DC) magnetron sputtering technology, and the films were annealed under vacuum condition at different temperatures from 400 ℃ to 800 ℃ for 1 hour. The surface morphologies, microstructure, and electrical properties of the films were tested and analyzed using scanning electron microscopy (SEM), X-ray diffraction (XRD), and four probes method. The results showed that single element doping of Zr or Cr improved the thermal stability of Cu interconnect films. The precipitation of Zr or Cr elements prevented mutual diffusion between Cu film and Si substrate, and suppressed the growth and aggregation of the grain, which made the films maintain good properties. After vacuum annealing at 700 ℃, the resistivity of the Cu(Zr) or Cu(Cr) film was less than 10 μΩ ? cm (pure Cu film was 74.70 μΩ ? cm). The co-doping of Zr and Cr elements further improved the thermal stability of Cu interconnection films while maintaining low resistivity and interconnect reliability. Especially after vacuum annealing at 800 ℃, the resistivity of Cu(ZrCr) film as low as 3.23 μΩ ? cm (pure Cu film was 103.50 μ Ω ? cm).