3納米結(jié)構(gòu),并且借助摻雜的方法獲得了BaZr1-xFexS3磁性半導(dǎo)體,并對(duì)其結(jié)構(gòu)和光、磁學(xué)等性能進(jìn)行研究。結(jié)果表明,對(duì)氧化物鈣鈦礦BaZrO3進(jìn)行硫化處理,即用同族的S元素替代O元素,樣品仍然可以表現(xiàn)出鈣鈦礦結(jié)構(gòu),而且硫化處理可以起到降低帶隙寬度的作用。同時(shí)用具有局域磁矩的3d過渡族金屬元素,如Fe進(jìn)行鈣鈦礦B位陽離子摻雜,通過控制Fe的摻雜量同樣可以系統(tǒng)地調(diào)控樣品的帶隙寬度,而且對(duì)于BaZr99.7Fe0.03S3和BaZr99.5Fe0.05S3樣品表現(xiàn)出了室溫鐵磁性。"/>

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Fe摻BaZrS3磁性半導(dǎo)體的制備與研究
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太原師范學(xué)院 化學(xué)與材料學(xué)院

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國家自然科學(xué)基金(52002266)；中國博士后科學(xué)基金(2020M673384)；山西省自然科學(xué)基金(201801D221142)


Preparation and Study of Fe-Doped BaZrS3 Magnetic Semiconductors
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College of Chemistry and Materials,Taiyuan Normal University

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    摘要:

    硫族鈣鈦礦是一類新興的半導(dǎo)體功能材料,具有獨(dú)特的電子結(jié)構(gòu)與光電性質(zhì)。本文采用溶膠-凝膠法結(jié)合化學(xué)氣相反應(yīng)的方法制備了硫族鈣鈦礦BaZrS3納米結(jié)構(gòu),并且借助摻雜的方法獲得了BaZr1-xFexS3磁性半導(dǎo)體,并對(duì)其結(jié)構(gòu)和光、磁學(xué)等性能進(jìn)行研究。結(jié)果表明,對(duì)氧化物鈣鈦礦BaZrO3進(jìn)行硫化處理,即用同族的S元素替代O元素,樣品仍然可以表現(xiàn)出鈣鈦礦結(jié)構(gòu),而且硫化處理可以起到降低帶隙寬度的作用。同時(shí)用具有局域磁矩的3d過渡族金屬元素,如Fe進(jìn)行鈣鈦礦B位陽離子摻雜,通過控制Fe的摻雜量同樣可以系統(tǒng)地調(diào)控樣品的帶隙寬度,而且對(duì)于BaZr99.7Fe0.03S3和BaZr99.5Fe0.05S3樣品表現(xiàn)出了室溫鐵磁性。

    Abstract:

    Chalcogenide perovskites are an emerging class of functional semiconductor materials with unique electronic structures and optoelectronic properties. In this paper, chalcogenide perovskite BaZrS3 nanostructures were prepared by a sol-gel method combined with chemical vapor reaction. And BaZr1-xFexS3 magnetic semiconductor was obtained by doping method. The structure, optical and magnetic properties were studied. The results show that the oxide perovskite BaZrO3 can still exhibit a perovskite structure after vulcanization, that is, replacing O element with S element. And the sulfide treatment can reduce the band gap width of the sample. At the same time, 3d transition metal elements with localized magnetic moment, such as Fe, are used for cation doping of perovskite B site. The band gap width of the samples can also be systematically regulated by controlling the doping amount of Fe. In particular, the BaZr99.7Fe0.03S3 and BaZr99.5Fe0.05S3 exhibit room temperature ferromagnetism.

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鄧晨華,陳雅靜,朱兆榮,樊世榮,段慧婷,楊鵬霞. Fe摻BaZrS3磁性半導(dǎo)體的制備與研究[J].稀有金屬材料與工程,2023,52(8):2800~2804.[Deng Chenhua, Chen Yajing, Zhu Zhaorong, Fan Shirong, Duan Huiting, Yang Pengxia. Preparation and Study of Fe-Doped BaZrS3 Magnetic Semiconductors[J]. Rare Metal Materials and Engineering,2023,52(8):2800~2804.]
DOI：10.12442/j. issn.1002-185X.20220801

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  • 收稿日期:2022-10-14
  • 最后修改日期:2022-12-23
  • 錄用日期:2023-01-05
  • 在線發(fā)布日期: 2023-08-28
  • 出版日期: 2023-08-24