2、GaN、Al和Si 5種襯底上制備二氧化硅氣凝膠薄膜,研究襯底類型對(duì)二氧化硅氣凝膠薄膜形貌的影響。通過XPS法檢測(cè)二氧化硅氣凝膠薄膜與襯底之間的界面結(jié)合。采用橢偏儀結(jié)合反射光譜擬合的方法對(duì)二氧化硅氣凝膠薄膜的折射率進(jìn)行測(cè)量。通過原子力顯微鏡和場(chǎng)發(fā)射掃描電鏡對(duì)二氧化硅氣凝膠薄膜的表面及截面形貌進(jìn)行觀測(cè)。結(jié)果表明,二氧化硅氣凝膠薄膜的形成會(huì)導(dǎo)致Al襯底表面Al-O中心峰產(chǎn)生0.07 eV的偏離,以及Ti襯底表面Ti 2p3/2中心峰0.43 eV的偏離。這表明Al襯底和Ti襯底與二氧化硅氣凝膠薄膜之間形成了某種化學(xué)鍵。同時(shí),折射指數(shù)測(cè)量顯示,Ti襯底表面形成的二氧化硅氣凝膠薄膜折射指數(shù)最低(1.17),平均孔隙率(63.8%)比硅襯底表面形成的二氧化硅氣凝膠薄膜孔隙率(57.2%)要高。襯底類型對(duì)二氧化硅氣凝膠薄膜形貌的影響與不同襯底的親水性有關(guān)。由于Ti襯底親水性最佳,更多的顆粒在Ti襯底表面形核和長大,導(dǎo)致其上制備的二氧化硅氣凝膠薄膜具有更大的表面粗糙度,以及更大的顆粒和孔徑。"/>

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常壓干燥法制備過程中襯底類型對(duì)二氧化硅氣凝膠薄膜形貌的影響
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作者單位:

1.廣東省科學(xué)院半導(dǎo)體研究所,廣東 廣州 510650;2.桂林電子科技大學(xué) 機(jī)電工程學(xué)院,廣西 桂林 541004

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基金項(xiàng)目:

Key-Area Research and Development Programme of Guangdong Province (Grant No. 2020B0101320001), the Project of Special Fund for Action to build the first-class domestic research institution of Guangdong Academy of Sciences (grant numbers 2021GDASYL-20210103080 and 2021GDASYL-20210103078) and by the Science and Technology Program Project of Guangzhou (grant number 202102020404


Effect of Substrate Type on Morphology of Silica Aerogel Film Prepared by Ambient Pressure Dry Method
Author:
Affiliation:

1.Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510650, China;2.School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China

Fund Project:

Key-Area Research and Development Program of Guangdong Province (2020B0101320001); Project of Special Fund for Action to Build the First-Class Domestic Research Institution of Guangdong Academy of Sciences (2021GDASYL-20210103080, 2021GDASYL-20210103078); Science and Technology Program Project of Guangzhou (202102020404)

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    摘要:

    采用常壓干燥法,在Ti、SiO2、GaN、Al和Si 5種襯底上制備二氧化硅氣凝膠薄膜,研究襯底類型對(duì)二氧化硅氣凝膠薄膜形貌的影響。通過XPS法檢測(cè)二氧化硅氣凝膠薄膜與襯底之間的界面結(jié)合。采用橢偏儀結(jié)合反射光譜擬合的方法對(duì)二氧化硅氣凝膠薄膜的折射率進(jìn)行測(cè)量。通過原子力顯微鏡和場(chǎng)發(fā)射掃描電鏡對(duì)二氧化硅氣凝膠薄膜的表面及截面形貌進(jìn)行觀測(cè)。結(jié)果表明,二氧化硅氣凝膠薄膜的形成會(huì)導(dǎo)致Al襯底表面Al-O中心峰產(chǎn)生0.07 eV的偏離,以及Ti襯底表面Ti 2p3/2中心峰0.43 eV的偏離。這表明Al襯底和Ti襯底與二氧化硅氣凝膠薄膜之間形成了某種化學(xué)鍵。同時(shí),折射指數(shù)測(cè)量顯示,Ti襯底表面形成的二氧化硅氣凝膠薄膜折射指數(shù)最低(1.17),平均孔隙率(63.8%)比硅襯底表面形成的二氧化硅氣凝膠薄膜孔隙率(57.2%)要高。襯底類型對(duì)二氧化硅氣凝膠薄膜形貌的影響與不同襯底的親水性有關(guān)。由于Ti襯底親水性最佳,更多的顆粒在Ti襯底表面形核和長大,導(dǎo)致其上制備的二氧化硅氣凝膠薄膜具有更大的表面粗糙度,以及更大的顆粒和孔徑。

    Abstract:

    Silica aerogel films were fabricated on five substrates, i.e., Ti, SiO2, GaN, Al and Si, by ambient pressure dry method. The influence of the substrate type on the morphology of the silica aerogel films was investigated. X-ray photoelectron spectroscopy (XPS) was used to observe the interfacial bonding states between silica aerogel films and the substrates. The refractive index of each film was measured by fitting the reflectance spectrum using spectroscopic ellipsometry. The morphology and cross-section of each film were observed by atomic force microscope and field emission scanning electron microscope. Results show that the binding energy offset of 0.07 eV of the Al-O center peak and 0.43 eV of the Ti 2p3/2 center peak are caused by the fabrication of the silica aerogel films, which suggests the formation of chemical bonds between the substrates and the silica aerogel films. The silica aerogel film prepared on the Ti substrate has the lowest refractive index of the films (1.17), and an approximate average porosity of 63.8% which is higher than that of the film on the Si substrate (57.2%). Effect of substrate type on the morphology of silica aerogel film is attributed to hydrophilicity. Owing to the best hydrophilicity of Ti substrate, more particles are accumulated on the Ti substrate to nucleate and grow, producing a silica aerogel film with larger surface roughness, particles and pores than other films.

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鄭偉,王垚,何思亮,向訊,崔銀花,胡川.常壓干燥法制備過程中襯底類型對(duì)二氧化硅氣凝膠薄膜形貌的影響[J].稀有金屬材料與工程,2023,52(2):493~501.[Zheng Wei, Wang Yao, He Siliang, Xiang Xun, Cui Yinhua, Hu Chuan. Effect of Substrate Type on Morphology of Silica Aerogel Film Prepared by Ambient Pressure Dry Method[J]. Rare Metal Materials and Engineering,2023,52(2):493~501.]
DOI:10.12442/j. issn.1002-185X.20220442

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  • 收稿日期:2022-05-20
  • 最后修改日期:2023-02-07
  • 錄用日期:2022-08-24
  • 在線發(fā)布日期: 2023-03-03
  • 出版日期: 2023-02-28