2、GaN、Al和Si 5種襯底上制備二氧化硅氣凝膠薄膜,研究襯底類型對(duì)二氧化硅氣凝膠薄膜形貌的影響。通過XPS法檢測(cè)二氧化硅氣凝膠薄膜與襯底之間的界面結(jié)合。采用橢偏儀結(jié)合反射光譜擬合的方法對(duì)二氧化硅氣凝膠薄膜的折射率進(jìn)行測(cè)量。通過原子力顯微鏡和場(chǎng)發(fā)射掃描電鏡對(duì)二氧化硅氣凝膠薄膜的表面及截面形貌進(jìn)行觀測(cè)。結(jié)果表明,二氧化硅氣凝膠薄膜的形成會(huì)導(dǎo)致Al襯底表面Al-O中心峰產(chǎn)生0.07 eV的偏離,以及Ti襯底表面Ti 2p3/2中心峰0.43 eV的偏離。這表明Al襯底和Ti襯底與二氧化硅氣凝膠薄膜之間形成了某種化學(xué)鍵。同時(shí),折射指數(shù)測(cè)量顯示,Ti襯底表面形成的二氧化硅氣凝膠薄膜折射指數(shù)最低(1.17),平均孔隙率(63.8%)比硅襯底表面形成的二氧化硅氣凝膠薄膜孔隙率(57.2%)要高。襯底類型對(duì)二氧化硅氣凝膠薄膜形貌的影響與不同襯底的親水性有關(guān)。由于Ti襯底親水性最佳,更多的顆粒在Ti襯底表面形核和長大,導(dǎo)致其上制備的二氧化硅氣凝膠薄膜具有更大的表面粗糙度,以及更大的顆粒和孔徑。"/>
1.廣東省科學(xué)院半導(dǎo)體研究所,廣東 廣州 510650;2.桂林電子科技大學(xué) 機(jī)電工程學(xué)院,廣西 桂林 541004
Key-Area Research and Development Programme of Guangdong Province (Grant No. 2020B0101320001), the Project of Special Fund for Action to build the first-class domestic research institution of Guangdong Academy of Sciences (grant numbers 2021GDASYL-20210103080 and 2021GDASYL-20210103078) and by the Science and Technology Program Project of Guangzhou (grant number 202102020404
1.Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510650, China;2.School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Key-Area Research and Development Program of Guangdong Province (2020B0101320001); Project of Special Fund for Action to Build the First-Class Domestic Research Institution of Guangdong Academy of Sciences (2021GDASYL-20210103080, 2021GDASYL-20210103078); Science and Technology Program Project of Guangzhou (202102020404)
鄭偉,王垚,何思亮,向訊,崔銀花,胡川.常壓干燥法制備過程中襯底類型對(duì)二氧化硅氣凝膠薄膜形貌的影響[J].稀有金屬材料與工程,2023,52(2):493~501.[Zheng Wei, Wang Yao, He Siliang, Xiang Xun, Cui Yinhua, Hu Chuan. Effect of Substrate Type on Morphology of Silica Aerogel Film Prepared by Ambient Pressure Dry Method[J]. Rare Metal Materials and Engineering,2023,52(2):493~501.]
DOI:10.12442/j. issn.1002-185X.20220442