S//(100)a和(010)S// a及(001)S//(021)a面的共價電子密度差Dr分別為0.003%、3.564%和5.811%,(100)S//(100)a面上的共價電子密度為10.3915 nm-2和10.3918 nm-2,(010)S// a面上的共價電子密度為0.0486 nm-2和0.0469 nm-2,(001)S//(021)a面上的共價電子密度為0.0486 nm-2和0.0459 nm-2。與(001)S//(021)a和(010)S// a面相比,(100)S//(100)a面的原子鍵合力與共價電子密度均最大,共價電子密度差最小,界面連續(xù)性最好,界面的應力最小。"/>

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Al-Cu-Mg合金S相及S/a相界面價電子結構分析
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遼寧工業(yè)大學

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遼寧省科學技術計劃項目資助(SY2016008)


Valence electron structures analysis of S phase and the S/a interface in Al-Cu-Mg alloy
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Liaoning University of Technology

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    摘要:

    基于EET理論,計算了a-Al與S相及S/a相界面的價電子結構,分析了S相價電子結構與析出強化、S/a相界面價電子結構與界面性能的關系。研究表明:S相共價鍵分布較為均勻,Cu原子將S相原子間鍵合力最強的4條共價鍵連接在一起構成主鍵絡。S相析出強化的微觀本質在于其最強共價鍵的鍵合力比基體a-Al的大135.14%,對位錯運動具有較強的阻力作用。S相與基體a-Al形成的(100)S//(100)a和(010)S// a及(001)S//(021)a面的共價電子密度差Dr分別為0.003%、3.564%和5.811%,(100)S//(100)a面上的共價電子密度為10.3915 nm-2和10.3918 nm-2,(010)S// a面上的共價電子密度為0.0486 nm-2和0.0469 nm-2,(001)S//(021)a面上的共價電子密度為0.0486 nm-2和0.0459 nm-2。與(001)S//(021)a和(010)S// a面相比,(100)S//(100)a面的原子鍵合力與共價電子密度均最大,共價電子密度差最小,界面連續(xù)性最好,界面的應力最小。

    Abstract:

    Based on the empirical electron theory of solids and molecules, the valence electron structures of S phase and the S/a interface were calculated, then the relationships between their VESs and precipitation strength and interface properties were analyzed in Al-Cu-Mg alloys in this paper. It is shown the covalent bond distribution of S phase is uniform and its main bond network is built by four stronger covalent bonds connected by Cu atoms. The nature of precipitation strength of S phase lies in its binding force of the strongest covalent bond is bigger 135.14% than that of the matrix a-Al and causes the stronger inhibition to the dislocation movement. The covalent electron density difference of (100)S//(100)a, (010)S// aand (001)S//(021)ais 0.003%, 3.564%and 5.811% respectively, while the covalent electron density of (100)S//(100)ais 10.3915 nm-2 and 10.3918 nm-2 , and that of (010)S// ais 0.0486 nm-2 and 0.0469 nm-2, and that of (001)S//(021)ais 0.0486 nm-2 and 0.0459 nm-2. Compared with (001)S//(021)a和(010)S// a, the binding force and covalent electron density of (100)S//(100)a is the biggest while its covalent electron density difference is the smallest, so that the interface continuity is the best and the interface stress is the smallest.

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屈華,徐巧至,劉偉東,齊健學. Al-Cu-Mg合金S相及S/a相界面價電子結構分析[J].稀有金屬材料與工程,2020,49(11):3816~3821.[Qu Hua, Xu Qiaozhi, Liu Weidong, Qi Jianxue. Valence electron structures analysis of S phase and the S/a interface in Al-Cu-Mg alloy[J]. Rare Metal Materials and Engineering,2020,49(11):3816~3821.]
DOI:10.12442/j. issn.1002-185X.20200264

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  • 收稿日期:2020-04-22
  • 最后修改日期:2020-05-09
  • 錄用日期:2020-05-27
  • 在線發(fā)布日期: 2020-12-09
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