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高遷移率的鈦摻雜氧化銦薄膜在晶硅/非晶硅異質(zhì)結電池上的研究
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1.晉能清潔能源科技股份公司;2.中國科學院上海高等研究院;3.從事從事異質(zhì)結太陽能電池非晶硅鍍膜的研究。

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High mobility Ti-doped In2O3 films for amorphous/crystalline silicon heterojunction solar cells
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1.HJT Solar Cell Project R D,JINNENG Clean Energy Technology LTD,Shanxi Comprehensive Reform Model Area,Jinzhong Area,Shanxi Province;2.Thin Film Optoelectronic Technology Center,Shanghai Advanced Research Institute,Chinese Academy of Sciences

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    摘要:

    本文使用鈦摻雜氧化銦旋轉(zhuǎn)靶制備透明導電薄膜應用在晶硅/非晶硅異質(zhì)結電池上。在不同氧含量下，研究T100薄膜的光電性能，同時對比分析ITO薄膜。在電鏡下T100薄膜呈現(xiàn)出柱狀結構，并且展示出優(yōu)異的光學性能。T100薄膜最大載流子遷移率可以達到75.6 cm2 V?1s?1。相比于ITO薄膜，T100薄膜具有優(yōu)異的電學傳導和透光率，因此在異質(zhì)結電池量產(chǎn)線上電池轉(zhuǎn)換效率可以實現(xiàn)0.26%的提升。

    Abstract:

    A newly Ti-doped In2O3 rotary target was used to prepare transparent conductive oxide (TCO) films for amorphous/crystalline silicon heterojunction solar cells. The changes in electrical and optical properties of TCO films were investigated based on T100 thin films deposited under various O2 content mixture and ITO reference. A columnar structure was observed and exhibited high quality on optical performance. Maximum mobility of 75.6 cm2 V?1s?1 was observed in Ti-doped In2O3 films. Compared to the ITO films, it was verified that T100 material can support enhancement of 0.26% in cell conversion efficiency based on HJT production line, mainly benefit from their excellent electrical transport properties, as well as the high transparency.

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黃金,鮑少娟,魯林峰,楊驥,白焱輝,張娟,高勇,王繼磊.高遷移率的鈦摻雜氧化銦薄膜在晶硅/非晶硅異質(zhì)結電池上的研究[J].稀有金屬材料與工程,2021,50(3):848~852.[Jin Huang, Shaojuan Bao, Linfeng Lu, Ji Yang, Yanhui Bai, Juan Zhang, Yong Gao, Jilei Wang. High mobility Ti-doped In2O3 films for amorphous/crystalline silicon heterojunction solar cells[J]. Rare Metal Materials and Engineering,2021,50(3):848~852.]
DOI：10.12442/j. issn.1002-185X.20200154

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  • 收稿日期:2020-03-09
  • 最后修改日期:2020-06-05
  • 錄用日期:2020-06-09
  • 在線發(fā)布日期: 2021-04-02
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