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雙級(jí)HPPMS靶電流對(duì)TiN鍍層微觀結(jié)構(gòu)及耐蝕性的影響
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西安理工大學(xué)材料科學(xué)與工程學(xué)院

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This work was supported by National Natural Science Foundation of China (Grant No.51271144).


Effect of target current of dual-stage HPPMS on the microstructure and corrosion resistance of TiN coatings
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Xi’an University of Technology,Xi’an

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Micro-arc ion plating environment building and study of leave-target mechanism and deposition action of plating material particle

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    摘要:

    高功率脈沖磁控濺射(HPPMS)利用較高的脈沖峰值靶功率密度(如:1-3kW/cm2)獲得高密度的等離子體,可提高TiN鍍層的微觀結(jié)構(gòu)和力學(xué)性能。然而,HPPMS技術(shù)的主要缺點(diǎn)是平均沉積速率較低,增加了鍍層的制備成本。為了解決傳統(tǒng)HPPMS平均沉積速率低的問題,研究提出一種新型的雙級(jí)HPPMS技術(shù),即在一個(gè)脈沖周期內(nèi)具有兩個(gè)連續(xù)的、獨(dú)立可調(diào)的脈沖階段。通過對(duì)雙級(jí)HPPMS電場(chǎng)的合理調(diào)配,可制備得到結(jié)構(gòu)致密的TiN鍍層,研究了雙級(jí)HPPMS靶電流對(duì)TiN鍍層微觀結(jié)構(gòu)及耐蝕性的影響。結(jié)果表明,當(dāng)靶電流增大至20A時(shí),靶面形貌由小凹坑轉(zhuǎn)變?yōu)榇竺娣e凹坑,說明鍍料粒子的脫靶方式由碰撞濺射轉(zhuǎn)變?yōu)樯A或蒸發(fā)。同時(shí),當(dāng)靶電流為10A時(shí),鍍層顆粒呈現(xiàn)三棱錐狀結(jié)構(gòu),平均晶粒尺寸為11nm;當(dāng)靶電流增大至25A時(shí),鍍層顆粒呈現(xiàn)光滑致密的圓胞狀結(jié)構(gòu),平均晶粒尺寸為18nm,光滑致密的組織結(jié)構(gòu)使鍍層具有較好的耐蝕性。

    Abstract:

    High power pulsed magnetron sputtering (HPPMS) improves microstructure and mechanical properties of TiN coating by high density plasma using a pulsed high peak target power density (e.g. 1-3 kW/cm2). However, the low average deposition rate increases preparation cost of coating, which becomes a downside of HPPMS technique. A dual-stage HPPMS technique, which has two continuous and independently adjustable steps in one pulse period, is developed in order to solve low deposition rate of traditional HPPMS. Through the reasonable allocation of electric field of dual-stage HPPMS, a fine and dense structure of TiN coating is prepared. The effects of target current of dual-stage HPPMS on the microstructure and corrosion resistance of TiN coating are studied. It was found that the morphology of target surface changed from small pits to large-area craters when target current increased to 20 A. It indicated that the leave-target mode of deposited particles changed from sputtering to sublimation or evaporation. Additionally, when target current was 10 A, the TiN coating exhibited a pyramid shape particles with average grain size of 11 nm. When target current increased to 25 A, the TiN coating showed a circular shape particles with average grain size of 18 nm and dense columnar structure. This microstructure gave rise to a better corrosion resistance.

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郝娟,蔣百靈.雙級(jí)HPPMS靶電流對(duì)TiN鍍層微觀結(jié)構(gòu)及耐蝕性的影響[J].稀有金屬材料與工程,2020,49(9):2991~2996.[Hao Juan, JIANG Bailing. Effect of target current of dual-stage HPPMS on the microstructure and corrosion resistance of TiN coatings[J]. Rare Metal Materials and Engineering,2020,49(9):2991~2996.]
DOI:10.12442/j. issn.1002-185X.20200093

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  • 收稿日期:2020-02-16
  • 最后修改日期:2020-04-14
  • 錄用日期:2020-04-17
  • 在線發(fā)布日期: 2020-10-15
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