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單晶和多晶SnSe熱電性能對比
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中國科學(xué)院電工研究所

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Chinese Academy of Sciences


Title: Thermoelectric Properties Difference between Single Crystal and Polycrystalline SnSeHong-Xing Mi, Huan-Yong Li, Cun-Yun Qiao, Ting Zhang, Li Han and Ju Xu*
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Chinese Academy of Sciences

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    摘要:

    硒化錫材料因為其優(yōu)良的ZT性能,有巨大的熱發(fā)電應(yīng)用潛力。此文我們詳細(xì)地對比了單晶和多晶硒化錫在熱力學(xué)和電性能輸運方面的差異。其中,單晶樣品是通過布里奇曼法合成的,多晶樣品是通過熔融、粉碎和SPS燒結(jié)合成的。熱電性能的測量則是通過四探針法和激光閃射法完成的。我們發(fā)現(xiàn)單晶樣品的功率因子是多晶的2倍,而熱導(dǎo)率也是多晶樣品的3倍左右,這就直接導(dǎo)致了單晶和多晶的最高ZT值差異不大。單晶硒化錫在823 K處取得最高ZT 為0.65,而多晶則是在923K 取得最高ZT為0.5. 這些發(fā)現(xiàn)可以為系統(tǒng)地探索硒化錫材料的熱電應(yīng)用提供堅實的基礎(chǔ)。

    Abstract:

    SnSe is a robust candidate for thermoelectric applications due to its excellent ZT performance. We compare single crystal and polycrystalline SnSe in thermal and electrical properties. The single crystal is synthesized with Bridgeman method, while the polycrystalline is synthesized with melting and SPS. The thermoelectric properties of both materials are measured with four-probe method and laser flash method. The results show power factor of single crystal is twice higher than that of polycrystalline, and thermal conductivity of single crystal are also thrice higher at all temperature range, leading to comparable highest ZT of those two materials. The highest ZT single crystal is 0.65 at 823 K, and 0.5 at 923 K for polycrystalline. These findings yield a foundation for the systematic exploration of SnSe thermoelectric application.

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米紅星.單晶和多晶SnSe熱電性能對比[J].稀有金屬材料與工程,2020,49(7):2234~2239.[mihongxing. Title: Thermoelectric Properties Difference between Single Crystal and Polycrystalline SnSeHong-Xing Mi, Huan-Yong Li, Cun-Yun Qiao, Ting Zhang, Li Han and Ju Xu*[J]. Rare Metal Materials and Engineering,2020,49(7):2234~2239.]
DOI:10.12442/j. issn.1002-185X.20190417

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  • 收稿日期:2019-05-15
  • 最后修改日期:2020-06-19
  • 錄用日期:2019-08-21
  • 在線發(fā)布日期: 2020-08-31
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