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PMMA表面高功率脈沖磁控濺射制備ITO涂層的研究
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南華大學

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國家磁約束核聚變能發(fā)展研究專項(2018YFE0313100);南華大學博士啟動基金(2016XQD29)


Preparation of ITO coating on the PMMA by high-power pulse magnetron sputtering
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    摘要:

    采用高功率脈沖磁控濺射技術(shù)在PMMA基體上制備了ITO涂層。利用XRD、SEM對涂層進行了相結(jié)構(gòu)的分析,并進行了劃痕實驗、光電性能測試,結(jié)果表明:偏壓、氫氬流量比等工藝參數(shù)對涂層的相結(jié)構(gòu)、膜基結(jié)合力、光電性能均有影響。增大偏壓,膜基結(jié)合力將增強,偏壓達到240 V時,膜基結(jié)合力最好(56.5N)。偏壓由0 V增加到160 V的過程中,涂層晶粒增大,透射率變高( 由82.24% 增至 89.82%),電阻率變低(由0.006571 減至 0.000543 Ω.cm)。氫氬流量比由0增至0.05,透射率變低(由89.82%減至56.12% )。氫氬流量比由0增至0.03,電阻率變低(由0.000543減至0.000212 Ω.cm ) ;氫氬流量比由0.03增至0.05,電阻率變高由0.000212 增至0.000373 Ω.cm)。

    Abstract:

    In this study, the ITO coatings were deposited on PMMA by high-power?pulse?magnetron?sputtering (HPPMS). The effects of HPPMS on the coatings by different parameters were investigated, and the phase, bonding strength,transmittance and resistivity were characterized by XRD, scratch tester, spectrophotometer and holzer test platform respectively. The results show that phase, bonding?strength, transmittance and resistivity are affected by pulsed bias and flowrate ratio of hydrogen and argon. With increasing the pulsed bias, the bonding?strength becomes better, the best bonding?strength is 56.5N when pulsed bias is 240 V. with the pulsed bias increasing from 0 V to 160 V, the grain size gets bigger, the transmittance becomes better( increasing from 82.24% to 89.82% ) and the resistivity also becomes better (decreases from 0.006571 to 0.000543 Ω.cm). With the flowrate ratio of hydrogen and argon increasing from 0 to 0.05,the transmittance becomes worse (decreasing from 89.82% to 56.12% ).With the flowrate ratio of hydrogen and argon increasing from 0 to 0.03 ,the resistivity becomes better( decreasing from 0.000543 to 0.000212 Ω.cm ) .With the flowrate ratio of hydrogen and argon increasing from 0.03 to 0.05,the resistivity becomes worse(increasing from 0.000212 to 0.000373 Ω.cm) .

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馮軍. PMMA表面高功率脈沖磁控濺射制備ITO涂層的研究[J].稀有金屬材料與工程,2020,49(7):2229~2233.[fengjun. Preparation of ITO coating on the PMMA by high-power pulse magnetron sputtering[J]. Rare Metal Materials and Engineering,2020,49(7):2229~2233.]
DOI:10.12442/j. issn.1002-185X.20190250

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  • 收稿日期:2019-03-26
  • 最后修改日期:2020-05-29
  • 錄用日期:2019-06-14
  • 在線發(fā)布日期: 2020-08-31
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