最新色国产精品精品视频,中文字幕日韩一区二区不卡,亚洲有码转帖,夜夜躁日日躁狠狠久久av,中国凸偷窥xxxx自由视频

The amorphous silicon oxycarbide powders containing in situ-grown single-crystal silicon carbide nanowires were fabricated via the pyrolysis of a polymeric precursor with ferrocene as the catalyst. The nanowires, with lengths of several micrometers and diameters of 10-100 nm, were composed of single-crystal β-SiC along the <111> growth direction and uniformly dispersed in the composite powders. The growth mechanism of silicon carbide nanowires was explored by analyzing the microstructure of the silicon carbide nanowires. The dielectric properties of the composite ceramic powders were studied, which demonstrates that silicon carbide nanowires can be used to adjust the electrical of the composite and a high nanowire content can result in a large real and imaginary part of permittivity.