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CdS量子點(diǎn)/CdTe納米棒光電極制備及其光電性能研究
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北京航空材料研究院,北京航空材料研究院,北京航空航天大學(xué) 材料科學(xué)與工程學(xué)院,北京航空材料研究院,北京航空材料研究院,北京航空材料研究院,北京航空材料研究院

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國(guó)家自然科學(xué)(51602299、51302255)、國(guó)家自然科學(xué)基金重點(diǎn)項(xiàng)目 (61534001)、國(guó)家基礎(chǔ)研究重點(diǎn)發(fā)展計(jì)劃(2012CB933200)


The photoelectrode of CdS QDs/CdTe NRAs preparation and the photoelectric property
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Beijing Institute of Aeronautical Materials,Beijing Institute of Aeronautical Materials,School of Materials Science and Engineering,Beihang University,Beijing Institute of Aeronautical Materials,Beijing Institute of Aeronautical Materials,Beijing Institute of Aeronautical Materials,Beijing Institute of Aeronautical Materials

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    摘要:

    本文利用化學(xué)沉積法和射頻濺射法成功實(shí)現(xiàn)了CdS量子點(diǎn)/CdTe納米棒復(fù)合光電極的制備。通過(guò)X射線粉末衍射(XRD)、掃描電鏡(SEM)、紫外-可見(jiàn)吸收光譜(UV-vis)和電化學(xué)工作站分別對(duì)獲得的光電極進(jìn)行了結(jié)構(gòu)、形貌和光電性能的表征；結(jié)果表明,所獲得的光電極由CdS量子點(diǎn)和CdTe一維納米棒組成,其中CdTe納米棒沿著(111)擇優(yōu)方向定向生長(zhǎng)。在不同CdS量子點(diǎn)厚度的光電極的電化學(xué)表征結(jié)果中,我們發(fā)現(xiàn)了由CdS的壓電效應(yīng)引起的新穎的熱釋電現(xiàn)象,并在25 cycle CdS QDs的光電極測(cè)試中獲得了最好的結(jié)果,開(kāi)路電壓為0.49 V,短路電流為71.09 μA,其I-t曲線的開(kāi)光比為6。我們?cè)谘芯窟^(guò)程中還發(fā)現(xiàn)了熱釋電引起的電流反向現(xiàn)象,這一特性對(duì)于未來(lái)提高光電器件的性能具有重要的意義。

    Abstract:

    In this paper, the photoelectrode of CdS QDs/CdTe NRAs are prepared by using chemical deposition for CdS and RF sputtering for CdTe. The achieved samples are investigated by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), uv-vis absorption spectroscopy (UV vis) and optical electrode electrochemical workstation, respectively. The SEM results confirm that the photoelectrode is consisted of CdS quantum dots and CdTe nanorods. The XRD results showed that CdTe nanorods grow along the preferred orientation of (111) direction. The novel pyroelectric phenomenon is found in the photoelectrode. The best results are achieved in the photoelectrode with 25 cycle CdS QDs, and the open circuit voltage and the short-circuit current is 0.49 V and 71.09 μA, respectively. The photoelectric ratio between the on and off is six. We also found the current reverse phenomenon caused by the pyroelectric property, and it has the important significance for improving photoelectric device performance.

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羅炳威,劉大博,鄧元,羅飛,田野,周海濤,陳冬生. CdS量子點(diǎn)/CdTe納米棒光電極制備及其光電性能研究[J].稀有金屬材料與工程,2018,47(10):3173~3178.[Luo Bingwei, Lui Dabo, Deng Yuan, Luo Fei, Tian Ye, Zhou Haitao, Chen Dongsheng. The photoelectrode of CdS QDs/CdTe NRAs preparation and the photoelectric property[J]. Rare Metal Materials and Engineering,2018,47(10):3173~3178.]
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  • 收稿日期:2016-12-26
  • 最后修改日期:2017-05-02
  • 錄用日期:2017-05-15
  • 在線發(fā)布日期: 2018-11-08
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