2、In2O3納米顆粒以及In2O3:Sn (ITO)、SnO2:Sb (ATO)和SnO2:In:Sb (IATO)多元復合納米顆粒。XRD結(jié)果表明,所制備的SnO2和In2O3基多元復合納米顆粒均為單相結(jié)構,沒有其它雜相；TEM結(jié)果表明,直流電弧等離子體所制備的單相納米顆粒分散性好,尺寸約20-50nm。該法合成的納米ITO和ATO顆粒所制備的ITO靶材和SnO2電極密度高、電阻率低,表明所制備的ITO和ATO納米顆?？梢詰糜谄桨屣@示和導電電極領域。"/>

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直流電弧等離子體法制備In(Sn)-O及Sn(In)(Sb)-O系納米顆粒
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中國船舶重工集團公司第七二五研究所,中國船舶重工集團公司第七二五研究所,中國船舶重工集團公司第七二五研究所,中國船舶重工集團公司第七二五研究所,中國船舶重工集團公司第七二五研究所,中國船舶重工集團公司第七二五研究所

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國家稀土稀有金屬新材料研發(fā)和產(chǎn)業(yè)化專項資助（發(fā)改辦高技（2012）1743號）


Synthesis of In(Sn)-O and Sn(In)(Sb)-O Systems Nanoparticles Using DC Arc Plasma Method
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Luoyang Ship Material Research Institute,Luoyang Ship Material Research Institute,Luoyang Ship Material Research Institute,Luoyang Ship Material Research Institute,Luoyang Ship Material Research Institute,Luoyang Ship Material Research Institute

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Project Support by National R&D and Industrialization Project for Rare Earth and Rare Metallic New Materials (20121743)

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    摘要:

    采用一種新的直流電弧等離子體法,通過對熔融的金屬進行爆破(或氣化),制備出了單相SnO2、In2O3納米顆粒以及In2O3:Sn (ITO)、SnO2:Sb (ATO)和SnO2:In:Sb (IATO)多元復合納米顆粒。XRD結(jié)果表明,所制備的SnO2和In2O3基多元復合納米顆粒均為單相結(jié)構,沒有其它雜相；TEM結(jié)果表明,直流電弧等離子體所制備的單相納米顆粒分散性好,尺寸約20-50nm。該法合成的納米ITO和ATO顆粒所制備的ITO靶材和SnO2電極密度高、電阻率低,表明所制備的ITO和ATO納米顆?？梢詰糜谄桨屣@示和導電電極領域。

    Abstract:

    A new DC arc plasma concept to produce metal oxides nanoparticles by metal melting, blasting or gasification processes is presented. It is exemplified for the preparation of SnO2, In2O3 single phases nanoparticles and the base of SnO2, In2O3 composite nanoparticles such as In2O3:Sn (ITO), SnO2:Sb (ATO), and SnO2:In:Sb (IATO). X-ray diffraction (XRD) indicated that the doped SnO2 and In2O3 are in single phase with no other secondary phases. Transmission electron microscopy (TEM) showed the particle size ranged from 20 nm to 50 nm for the prepared single phases of nanoparticles with good dispersion. The prepared ITO and ATO nanoparticles were utilized in ITO target and ATO electrode, and their density and electrical properties were tested. The prepared ITO target and ATO electrode show high density and low resistivity and film-forming effect is good for ITO target, implying that the ITO and ATO nanoparticles prepared by DC arc plasma can be applied in the field of flat panel displays and conductive electrodes.

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謝斌,劉冠鵬,李龍騰,趙延飛,楊碩,郗雨林.直流電弧等離子體法制備In(Sn)-O及Sn(In)(Sb)-O系納米顆粒[J].稀有金屬材料與工程,2018,47(7):2037~2041.[Xie Bin, Liu Guanpeng, Li Longteng, Zhao Yanfei, Yang Shuo, Xi Yulin. Synthesis of In(Sn)-O and Sn(In)(Sb)-O Systems Nanoparticles Using DC Arc Plasma Method[J]. Rare Metal Materials and Engineering,2018,47(7):2037~2041.]
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  • 收稿日期:2016-11-09
  • 最后修改日期:2017-01-03
  • 錄用日期:2017-02-21
  • 在線發(fā)布日期: 2018-10-10
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