3Ti4O12(CCTO)的高能量密度MEMS靜電式超級電容器。首先,以硅片為基底,通過溶膠-凝膠法在不同燒結(jié)溫度(700℃、800℃、900℃)下制備CCTO薄膜,分別采用X射線衍射儀(XRD)和場發(fā)射掃描電鏡(FE-SEM)對薄膜的形貌、組分和結(jié)晶狀況進行表征,發(fā)現(xiàn)在800℃燒結(jié)溫度下CCTO薄膜結(jié)晶狀況最佳。然后,利用金屬-絕緣層-半導(dǎo)體結(jié)構(gòu)測試其I-V和C-V特性,計算得到薄膜的最大閾值電壓和能量密度分別為47V和3.2J/cm3。同時,首次對高介電常數(shù)介質(zhì)膜中存在的介質(zhì)充電現(xiàn)象進行了研究,并分析了介質(zhì)充電對靜電式超級電容器性能的影響。"/>

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基于MEMS超級電容器的高介電常數(shù)CaCu3Ti4O12薄膜制備及電學(xué)特性研究
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太原理工大學(xué)S信息工程學(xué)院S微納系統(tǒng)研究中心,太原理工大學(xué)S信息工程學(xué)院S微納系統(tǒng)研究中心,太原理工大學(xué)S信息工程學(xué)院S微納系統(tǒng)研究中心,太原理工大學(xué)S信息工程學(xué)院S微納系統(tǒng)研究中心,太原理工大學(xué)S信息工程學(xué)院S微納系統(tǒng)研究中心

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國家自然科學(xué)青年基金( 51505324)、省基礎(chǔ)研究計劃項目(2014011019-1、20141001021-2)


The preparation and electrical properties of CaCu3Ti4O12 films with high dielectric constant based on MEMS supercapacitors
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MicroNano System research Center,Key Lab of Advanced Transducers and Intelligent Control System Ministry of Education College of Information Engineering,Taiyuan University of Technology,Taiyuan,Shanxi,MicroNano System research Center,Key Lab of Advanced Transducers and Intelligent Control System Ministry of Education College of Information Engineering,Taiyuan University of Technology,Taiyuan,Shanxi,MicroNano System research Center,Key Lab of Advanced Transducers and Intelligent Control System Ministry of Education College of Information Engineering,Taiyuan University of Technology,Taiyuan,Shanxi,MicroNano System research Center,Key Lab of Advanced Transducers and Intelligent Control System Ministry of Education College of Information Engineering,Taiyuan University of Technology,Taiyuan,Shanxi,MicroNano System research Center,Key Lab of Advanced Transducers and Intelligent Control System Ministry of Education College of Information Engineering,Taiyuan University of Technology,Taiyuan,Shanxi

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    摘要:

    相對于電化學(xué)超級電容器,靜電式電容器具有更高的功率密度和可靠性,但能量密度過低。本文提出制備基于高介電常數(shù)薄膜CaCu3Ti4O12(CCTO)的高能量密度MEMS靜電式超級電容器。首先,以硅片為基底,通過溶膠-凝膠法在不同燒結(jié)溫度(700℃、800℃、900℃)下制備CCTO薄膜,分別采用X射線衍射儀(XRD)和場發(fā)射掃描電鏡(FE-SEM)對薄膜的形貌、組分和結(jié)晶狀況進行表征,發(fā)現(xiàn)在800℃燒結(jié)溫度下CCTO薄膜結(jié)晶狀況最佳。然后,利用金屬-絕緣層-半導(dǎo)體結(jié)構(gòu)測試其I-V和C-V特性,計算得到薄膜的最大閾值電壓和能量密度分別為47V和3.2J/cm3。同時,首次對高介電常數(shù)介質(zhì)膜中存在的介質(zhì)充電現(xiàn)象進行了研究,并分析了介質(zhì)充電對靜電式超級電容器性能的影響。

    Abstract:

    Compared to electrochemical supercapacitors, electrostatic supercapacitors have higher power density and reliability, but its energy density are low. In this paper, the MEMS electrostatic supercapacitor with high energy density were prepared based on the high dielectric constant CaCu3Ti4O12(CCTO) film. Firstly, CCTO films were synthesized under the different sintering temperatures (700℃, 800℃, 900℃), through a sol-gel method on silicon substrate. The morphology, phase identification and crystalline of CCTO films were characterized using X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM) respectively. The results showed that the CCTO film has the best quality at 800℃. And then, we tested the I-V and C-V characteristics by the metal-insulators-semiconductor capacitor structure, getting the largest hreshold voltage and energy density, which have values of 47 V and 3.2J /cm3. Meanwhile, the paper firstly proposed to research the phenomenon of dielectric charging in the high dielectric constant film and analyzed the influence on electrostatic supercapacitors.

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趙清華,高雅,段倩倩,史健芳,李剛.基于MEMS超級電容器的高介電常數(shù)CaCu3Ti4O12薄膜制備及電學(xué)特性研究[J].稀有金屬材料與工程,2018,47(7):2252~2256.[ZhaoQinghua, Gao Ya, Duan Qianqian, Shi Jianfang, Li Gang. The preparation and electrical properties of CaCu3Ti4O12 films with high dielectric constant based on MEMS supercapacitors[J]. Rare Metal Materials and Engineering,2018,47(7):2252~2256.]
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  • 收稿日期:2016-06-14
  • 最后修改日期:2016-09-14
  • 錄用日期:2016-10-18
  • 在線發(fā)布日期: 2018-10-10
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