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輝弧放電過(guò)渡區(qū)間靶電流密度對(duì)TiN薄膜 結(jié)構(gòu)及性能的影響
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西安理工大學(xué),西安理工大學(xué)

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國(guó)家自然科學(xué)基金項(xiàng)目(面上項(xiàng)目,重點(diǎn)項(xiàng)目,重大項(xiàng)目)


Influence of target current density at glow-arc discharge transitional section on microstructure and properties of TiN films
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    摘要:

    通過(guò)可調(diào)脈沖電源控制模式將氣體放電伏安特性引至輝弧放電過(guò)渡區(qū)間,并在不同的靶電流密度條件下制備了TiN薄膜,采用XRD,SEM,TEM,納米壓痕儀與涂層附著力自動(dòng)劃痕儀等表征方法對(duì)比研究了輝弧放電過(guò)渡區(qū)間靶電流密度對(duì)薄膜組織結(jié)構(gòu)、硬度及膜基結(jié)合強(qiáng)度的影響。結(jié)果表明,隨著靶電流密度增大,鍍料粒子由濺射環(huán)境的碰撞脫靶逐漸轉(zhuǎn)變?yōu)榕鲎苍鰪?qiáng)熱發(fā)射脫靶,具有更高密度、高離化、高能量的沉積粒子;薄膜由非晶態(tài)逐漸轉(zhuǎn)變?yōu)榫B(tài),具有更為良好的表面質(zhì)量和致密程度,且薄膜的硬度、膜基結(jié)合力分別由13.4GPa、2.4N提高至24.7 GPa、21.6N。

    Abstract:

    The volt-ampere characteristics of gas discharge was introduced into the glow-arc discharge transitional section using adjustable pulse power control mode and deposited TiN films under different target current density conditions.The influence of target current density on the microstructure, hardness and bonding strength of the films was studied by means of XRD, SEM, TEM, nano indentation tester and coating adhesion automatic scratch tester. The results showed that plating material particles leave-target mechanism transformed form collide leave-target in sputtering condition to collide enhance heat emission leave-target and the deposition particles had a higher density, high ionization and high energy with the increase of target current density. The films have better surface quality and density degree, and the hardness and membrane-binding strength were upgraded from 13.4GPa、10.5N to 24.7GPa、16.8N respectively.

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郝娟,蔣百靈.輝弧放電過(guò)渡區(qū)間靶電流密度對(duì)TiN薄膜 結(jié)構(gòu)及性能的影響[J].稀有金屬材料與工程,2018,47(4):1275~1280.[Hao Juan, JIANG Bailing. Influence of target current density at glow-arc discharge transitional section on microstructure and properties of TiN films[J]. Rare Metal Materials and Engineering,2018,47(4):1275~1280.]
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  • 收稿日期:2016-03-31
  • 最后修改日期:2016-05-19
  • 錄用日期:2016-06-12
  • 在線發(fā)布日期: 2018-05-31
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