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電子結(jié)構(gòu)對La,Zr雙摻雜γ-TiAl基合金延性的影響
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中國民航大學(xué)理學(xué)院低維材料與技術(shù)研究所,中國民航大學(xué)理學(xué)院低維材料與技術(shù)研究所,中國民航大學(xué)理學(xué)院低維材料與技術(shù)研究所,中國民航大學(xué)中歐航空工程師學(xué)院,中國民航大學(xué)理學(xué)院低維材料與技術(shù)研究所,中國民航大學(xué)理學(xué)院低維材料與技術(shù)研究所,中國民航大學(xué)中歐航空工程師學(xué)院

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TG146.2

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國家自然科學(xué)基金資助(項(xiàng)目號(hào)51201181)中國民航大學(xué)中央高校基本科研業(yè)務(wù)費(fèi)(3122014K001)


Theoretical Study on Electronic Structure and Ductility of La and Zr Co-doped Gamma-TiAl Based Alloys
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Institute of Low Dimension Materials and Technology,College of Science,Civil Aviation University of China,Institute of Low Dimension Material and Technology,College of Science,Civil Aviation University of China,Institute of Low Dimension Material and Technology,College of Science,Civil Aviation University of China,Sino-European Institute of Aviation Engineering,Civil Aviation University of China,Institute of Low Dimension Material and Technology,College of Science,Civil Aviation University of China,Institute of Low Dimension Material and Technology,College of Science,Civil Aviation University of China,Sino-European Institute of Aviation Engineering,Civil Aviation University of China

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    摘要:

    γ-TiAl基合金具有優(yōu)良的高溫性能,且低密度、高比強(qiáng)度,在航空航天等領(lǐng)域備受青睞,室溫延性差則制約著此類材料的廣泛應(yīng)用。以密度泛函平面波贗勢方法為基礎(chǔ),計(jì)算研究了16個(gè)La和(或)Zr替代摻雜γ-TiAl體系(S1,S2,S3,S4,S51~S55,S61~S65,S7和S8)的結(jié)構(gòu)與性質(zhì)。對平均形成能的計(jì)算分析表明,它們均有較好的能量穩(wěn)定性;根據(jù)彈性常量和Born-Huang判據(jù)預(yù)測,除S61外,15個(gè)摻雜體系均具有力學(xué)穩(wěn)定性,預(yù)報(bào)它們是可以實(shí)際制備并穩(wěn)定存在的。通過對比各體系的彈性模量比,發(fā)現(xiàn)La和Zr雙摻雜體系的延性(特別是S51,S52,S63和S64)明顯改善,且雙摻雜體系的延性與雜質(zhì)原子的相對位置關(guān)系不大。布居數(shù)、電荷密度分布計(jì)算和分析揭示,La和Zr雙摻雜γ-TiAl體系各向同性程度提高、延性改善的原因在于體系中Ti4s→3d,Al3s→3p電荷轉(zhuǎn)移明顯減少、自由電子數(shù)量增多,導(dǎo)致p-d軌道雜化作用減弱,Al(La,Zr)-Ti共價(jià)鍵數(shù)量減少和Ti-Ti共價(jià)鍵結(jié)合強(qiáng)度顯著增強(qiáng),化學(xué)鍵Al-Al,Ti-Ti和Al-Ti的強(qiáng)度明顯趨同、金屬性增強(qiáng)。

    Abstract:

    Because of the low density, high specific strength and excellent performance at high temperature, γ-TiAl based alloys have become a new generation of materials in the aeronautic field. However, its poor ductility at room temperature leads to its bad performance in the manufacture process, which has set a boundary to its wide applications. In this paper, 16 La and (or) Zr doped γ-TiAl systems (S1, S2, S3, S4, S51~S55, S61~S65, S7 and S8) are constructed and investigated by using the plane wave pseudo potentials method based on the density functional theory and other physical theories. The results of average formation energy show that they possess good energy stabilities. According to the elastic parameters and Born-Huang criteria, it is forecasted that they (except system S61) are in good mechanical stabilities. So, the 15 doped systems can be prepared in experiment and are stable in existence. The comparison of G/B shows that all La and Zr co-doped systems (especially S51, S52, S63 and S64) have better ductile properties than that of pure γ-TiAl systems. The ductility of co-doped systems is not much correlated with comparative position of doping atoms. The calculation results and discussion about population, charge densities indicate that the improvements of ductility and isotropy of co-doped systems come of the decrease of Ti4s→3d, Al3s→3p charge transfer and increase of free electrons number. This change results in the weakening of p-d orbital hybrid, the decreasing number of bonds Al (La, Zr)-Ti and the increasing strength of covalent bond Ti-Ti, and then the chemical bonds Al-Al, Ti-Ti and Al-Ti distinctly tend towards the same strength and become stronger metallic property.

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宋慶功,趙俊普,顧威風(fēng),蔣清杰,楊寶寶,郭艷蕊,胡雪蘭.電子結(jié)構(gòu)對La, Zr雙摻雜γ-TiAl基合金延性的影響[J].稀有金屬材料與工程,2018,47(4):1154~1159.[Song Qing-Gong, Zhao Junpu, Gu Weifeng, Jiang Qingjie, Yang Baobao, Guo Yanrui, Hu Xuelan. Theoretical Study on Electronic Structure and Ductility of La and Zr Co-doped Gamma-TiAl Based Alloys[J]. Rare Metal Materials and Engineering,2018,47(4):1154~1159.]
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  • 收稿日期:2016-03-30
  • 最后修改日期:2016-07-03
  • 錄用日期:2016-08-17
  • 在線發(fā)布日期: 2018-05-31
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