2SO4溶液中進行不同時間的表面鈍化處理；利用俄歇電子能譜(AES)、X射線光電子能譜(XPS)表面分析技術(shù)及Mott-Schottky曲線測試技術(shù)研究鈍化時間對Fe30Mn9Al合金鈍化膜的組成結(jié)構(gòu)與半導(dǎo)體特性的影響。研究結(jié)果表明：Fe30Mn9Al合金在1 mol/L Na2SO4溶液中鈍化15 min所得鈍化膜分為內(nèi)外兩層,外層具有n型半導(dǎo)體特征,由Fe2O3、Al2O3、Mn2O3、FeOOH和AlOOH組成,內(nèi)層具有p型半導(dǎo)體特征,由MnO組成。隨著鈍化時間由15 min增至5 h,鈍化膜中的MnO溶解,Mn含量降低,Fe、Al填充Mn留下的空位在膜內(nèi)富集,Fe、Al氧化物轉(zhuǎn)變?yōu)镕e、Al氫氧化物,鈍化膜由FeOOH、AlOOH和Mn2O3組成,具有n型半導(dǎo)體特征。與鈍化15 min所得鈍化膜相比,鈍化5 h所得鈍化膜的施主濃度ND由2.58′1021 cm-3降至1.96′1021 cm-3,平帶電位Efb由-283 mV降至-366 mV,鈍化膜的保護性能提高。"/>

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鈍化時間對Fe30Mn9Al合金鈍化膜半導(dǎo)體特性影響
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大連交通大學(xué)材料科學(xué)與工程學(xué)院,大連交通大學(xué)材料科學(xué)與工程學(xué)院,大連交通大學(xué)材料科學(xué)與工程學(xué)院,大連交通大學(xué)材料科學(xué)與工程學(xué)院

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TG

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國家自然科學(xué)基金資助(項目號59901003)


Effects of passivating time on the semiconductor properties of passive film formed on an Fe30Mn9Al alloy
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School of Materials Science and Engineering,Dalian Jiaotong University,School of Materials Science and Engineering,Dalian Jiaotong University,School of Materials Science and Engineering,Dalian Jiaotong University,School of Materials Science and Engineering,Dalian Jiaotong University

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    摘要:

    運用電化學(xué)陽極鈍化技術(shù)對Fe30Mn9Al合金在1mol/L Na2SO4溶液中進行不同時間的表面鈍化處理；利用俄歇電子能譜(AES)、X射線光電子能譜(XPS)表面分析技術(shù)及Mott-Schottky曲線測試技術(shù)研究鈍化時間對Fe30Mn9Al合金鈍化膜的組成結(jié)構(gòu)與半導(dǎo)體特性的影響。研究結(jié)果表明：Fe30Mn9Al合金在1 mol/L Na2SO4溶液中鈍化15 min所得鈍化膜分為內(nèi)外兩層,外層具有n型半導(dǎo)體特征,由Fe2O3、Al2O3、Mn2O3、FeOOH和AlOOH組成,內(nèi)層具有p型半導(dǎo)體特征,由MnO組成。隨著鈍化時間由15 min增至5 h,鈍化膜中的MnO溶解,Mn含量降低,Fe、Al填充Mn留下的空位在膜內(nèi)富集,Fe、Al氧化物轉(zhuǎn)變?yōu)镕e、Al氫氧化物,鈍化膜由FeOOH、AlOOH和Mn2O3組成,具有n型半導(dǎo)體特征。與鈍化15 min所得鈍化膜相比,鈍化5 h所得鈍化膜的施主濃度ND由2.58′1021 cm-3降至1.96′1021 cm-3,平帶電位Efb由-283 mV降至-366 mV,鈍化膜的保護性能提高。

    Abstract:

    The effect of anodic aging time on the constitution, structure and semiconductor properties of passive film formed on an Fe30Mn9Al alloy in 1mol/L Na2SO4solution were studied by using combined Auger electron spectroscopy (AES) / X-ray photoelectron spectroscopy (XPS) analysis and the measurement of Mott-Schottky curves. The passive film formed on Fe30Mn9Al alloy in 1mol/L Na2SO4solution for 15 min has two layers of inside and outside, and the outside layer has the characteristics of n-type semiconductor, composed of Fe2O3, Al2O3, Mn2O3, FeOOH and AlOOH, the inside layer has the characteristics of p-type semiconductor, composed of MnO. The passive film formed on Fe30Mn9Al alloy in 1mol/L Na2SO4solution for 5 h has the characteristics of n-type semiconductor, composed of FeOOH , AlOOH and Mn2O3. As the anodic aging time increases from 15 min to 5 h, the Al and Fe contents are enriched and the Mn is depleted, MnO dissolved, the Al and Fe oxides are changed to the Al and Fe hydroxides; The donor densities ND of the passive film decreased from 2.58′1021 cm-3 to 1.96′1021 cm-3, the flat band potential Efb decreased from -283 mV to -366 mV, respectively.

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朱雪梅,解雪,張琳,張彥生.鈍化時間對Fe30Mn9Al合金鈍化膜半導(dǎo)體特性影響[J].稀有金屬材料與工程,2017,46(7):1972~1976.[Zhu Xuemei, Xie Xue, Zhang Lin, Zhang Yansheng. Effects of passivating time on the semiconductor properties of passive film formed on an Fe30Mn9Al alloy[J]. Rare Metal Materials and Engineering,2017,46(7):1972~1976.]
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  • 收稿日期:2016-03-14
  • 最后修改日期:2016-06-04
  • 錄用日期:2016-11-10
  • 在線發(fā)布日期: 2017-11-14
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