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NiSe2塊體材料的制備及熱電性能研究
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國家自然科學(xué)基金（51272023）；國家重點基礎(chǔ)研究發(fā)展計劃(“973”計劃) (2013CB632503)


Synthesis and Thermoelectric Properties of NiSe2 Bulk Material
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    摘要:

    結(jié)合機(jī)械合金化(MA)與放電等離子燒結(jié)(SPS)工藝制備了NiSe2塊體熱電材料。研究了MA球磨時間和SPS燒結(jié)溫度對NiSe2熱電材料的物相、顯微組織以及電熱傳輸性能的影響。結(jié)果表明：當(dāng)轉(zhuǎn)速為425 r/min，球磨40 h后合成了約45 nm的NiSe2納米粉體。NiSe2粉體是一種直接禁帶半導(dǎo)體，禁帶寬度為2.653 eV，其塊體呈n型導(dǎo)電特征。燒結(jié)溫度為773 K時，NiSe2塊體材料在323 K獲得最大功率因子101 μW·m-1·K-2，熱導(dǎo)率為7.5 W·m-1·K-1，最大ZT值為0.0045

    Abstract:

    NiSe2 thermoelectric materials were prepared by the combination of mechanical alloying (MA) and spark plasma sintering (SPS). The effects of MA time and SPS temperature on the phase structure, microstructure, thermoelectric and optical properties were investigated. The results show that NiSe2 nanopowders with the grain sizes of 45 nm are synthesized by applying MA at 425 r/min for 40 h. It is proved that NiSe2 powder material is a direct band gap semiconductor with an optical band gap of about 2.653 eV and the NiSe2 bulk possesses a n-type semiconductive characteristic. The NiSe2 bulk prepared by applying SPS at 773 K attains a maximum power factor of 101 μW·m-1·K-2 along with a thermal conductivity 7.5 W·m-1·K-1 and the largest ZT value 0.0045

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鄭麗君,張波萍,韓成功. NiSe2塊體材料的制備及熱電性能研究[J].稀有金屬材料與工程,2015,44(12):3124~3129.[Zheng Lijun, Zhang Boping, Han Chenggong. Synthesis and Thermoelectric Properties of NiSe2 Bulk Material[J]. Rare Metal Materials and Engineering,2015,44(12):3124~3129.]
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  • 收稿日期:2015-01-09
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  • 在線發(fā)布日期: 2016-08-29
  • 出版日期: 2015-12-25