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Correlations of Photoluminescence and Size Evolution of Si Quantum Dots in Amorphous Silicon Carbide
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Correlations of Photoluminescence and Size Evolution of Si Quantum Dots in Amorphous Silicon Carbide
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Xi’An Science and Technology Plan Projects (CX12189WL37, CXY1352WL08); National Natural Science Foundation of China (51271139, 51171145); National Key Basic Research Development Program of China (“973” Program) (2010CB631002)

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    摘要:

    通過磁控濺射技術(shù)和1100 ℃的高溫后續(xù)退火處理，在富硅碳化硅中形成高密度、小尺寸的硅量子點。其微結(jié)構(gòu)和光學(xué)特性由高分辨電鏡和光致發(fā)光技術(shù)進行表征。結(jié)合斯托克斯偏移和高分辨電鏡分析表明，由非晶碳化硅包覆的硅量子點存在α-Si、c-Si兩種結(jié)構(gòu)，并呈現(xiàn)多帶隙特征，子帶隙分布范圍從2.3到3.5 eV，出現(xiàn)紫外光到綠光的光致發(fā)光特征峰；發(fā)現(xiàn)此特征的硅量子點尺寸分布在~1.0~4.0 nm；通過改變薄膜中的Si和C原子比例，以及改變退火參數(shù)可進一步優(yōu)化和控制硅量子點的微結(jié)構(gòu)

    Abstract:

    Silicon quantum dots (Si QDs) with dot density up to 9×1013 cm-2 in amorphous SixC (x>1) thin films were obtained by magnetron sputtering deposition and post-annealing process at 1100 oC. Photoluminescence measurement indicates a multi-band configuration in the range from ultraviolet to green (2.3~3.5 eV). The analysis of Stokes shift and HRTEM demonstrates that there exist two kinds of Si QDs embedded in silicon carbide dielectric matrix: α-Si QDs and c-Si QDs which show the multi-band characteristics. The photoluminescence is closely related with the microstructure size distribution of Si QDs from 1.0 to 4.0 nm. Moreover, the density and the size distribution of Si QDs can be improved further by optimizing the ratio of Si/C atoms as well as annealing parameters. This opens a route to fabricate all-Si tandem solar cell

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暢庚榕,馬 飛,付福興,徐可為. Correlations of Photoluminescence and Size Evolution of Si Quantum Dots in Amorphous Silicon Carbide[J].稀有金屬材料與工程,2015,44(12):3023~3026.[Chang Gengrong, Ma Fei, Fu Fuxing, Xu Kewei. Correlations of Photoluminescence and Size Evolution of Si Quantum Dots in Amorphous Silicon Carbide[J]. Rare Metal Materials and Engineering,2015,44(12):3023~3026.]
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  • 收稿日期:2015-04-15
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  • 在線發(fā)布日期: 2016-08-29
  • 出版日期: 2015-12-25