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Trapping and Detrapping Effects on Current Conduction Mechanisms at Interface of Au/HfO2 High-k Films
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Trapping and Detrapping Effects on Current Conduction Mechanisms at Interface of Au/HfO2 High-k Films
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Project of Key Areas of Innovation Team in Shaanxi Province (2014KCT-12)

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    摘要:

    主要研究了經(jīng)不同溫度退火后 HfO2 高k柵介質(zhì)薄膜的電流電壓特性，結(jié)果表明，在柵極入射下，漏電流與 Au/HfO2 界面處的陷阱密度密切相關，在高電場下，Au/HfO2/p-Si 結(jié)構(gòu)的主要導電機制為 Schottky發(fā)射和 Poole-Frenkel 發(fā)射。研究了電壓應力對柵介質(zhì)薄膜穩(wěn)定性的影響，由于局部導電通道的形成，經(jīng)時電介質(zhì)擊穿(TDDB)現(xiàn)象被觀察到

    Abstract:

    The leakage current density-voltage properties of HfO2 high-k dielectrics annealed at different temperatures and the current conduction mechanisms under gate injection were studied in details. It is found that the leakage currents are mostly associated with the high trap density at the interface of Au/HfO2 under gate injection, and the dominant conduction mechanisms of Au/HfO2/p-Si structure are the Schottky emission and Poole-Frenkel mechanism in the region of high electric fields. To study the reliability of the gate dielectric film, the capacitors were stressed at constant voltages under gate injection. Time dependent dielectric breakdown (TDDB) can be observed due to the formation of a percolation cluster under constant voltage stress.

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張育潛,傅 莉. Trapping and Detrapping Effects on Current Conduction Mechanisms at Interface of Au/HfO2 High-k Films[J].稀有金屬材料與工程,2015,44(12):2992~2995.[Zhang Yuqian, Fu Li. Trapping and Detrapping Effects on Current Conduction Mechanisms at Interface of Au/HfO2 High-k Films[J]. Rare Metal Materials and Engineering,2015,44(12):2992~2995.]
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  • 收稿日期:2014-12-21
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  • 在線發(fā)布日期: 2016-08-29
  • 出版日期: 2015-12-25