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多孔結(jié)構(gòu)阻擋層對(duì)CuW/Al界面組織及性能的影響
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西安理工大學(xué) 陜西省電工材料與熔滲技術(shù)重點(diǎn)實(shí)驗(yàn)室,西安理工大學(xué) 陜西省電工材料與熔滲技術(shù)重點(diǎn)實(shí)驗(yàn)室

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國(guó)家自然科學(xué)基金資助(項(xiàng)目號(hào)51371139)


Effect of porous structure barrier layer on microstructure and properties of CuW/Al interface
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    摘要:

    將CuW假合金表面部分Cu腐蝕掉，預(yù)留100-200μm厚度的W骨架，隨后通過(guò)化學(xué)鍍?cè)赪骨架上形成多孔結(jié)構(gòu)Ni擴(kuò)散層，最后在700℃下用固-液連接的方法制備出CuW/Al整體材料。比較了不同保溫時(shí)間下界面擴(kuò)散區(qū)域微觀組織結(jié)構(gòu)，分析了界面擴(kuò)散溶解層金屬間化合物析出序列。結(jié)果表明，CuW/Al界面間多孔結(jié)構(gòu)Ni中間層可有效抑制柱狀A(yù)l2Cu相的生成和柯肯達(dá)兒孔洞裂紋的產(chǎn)生，界面處生成物主要以Al2Cu和 Al5W化合物為主。添加多孔結(jié)構(gòu)Ni中間層可提高CuW/Al界面結(jié)合性能和電導(dǎo)率。

    Abstract:

    A layer of W skeleton with 100-200μm was obtained by corroding the Cu of CuW surface. Then, a porous structure diffusion barrier layer was formed by electroless Ni plating on W skeleton. Finally, the CuW/Al bimetals was prepared by using solid-liquid connection at 700℃. The microstructure of interfacial diffusion layer at different holding time was investigated, and the precipitation sequence of the intermetallic compounds was analyzed. The results show that the porous structure Ni interlayer between CuW/Al interface can effectively reduce the amount of Al2Cu compounds, and prevent the formation of Kirkendall voids. The CuW/Al interface mainly consists of Al2Cu and Al5W phases. By adding porous structure Ni interlayer, the interface bonding property and electrical conductivity of CuW/Al were improved.

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金艷婷,梁淑華.多孔結(jié)構(gòu)阻擋層對(duì)CuW/Al界面組織及性能的影響[J].稀有金屬材料與工程,2017,46(10):2943~2949.[Jin Yanting, Liang Shuhua. Effect of porous structure barrier layer on microstructure and properties of CuW/Al interface[J]. Rare Metal Materials and Engineering,2017,46(10):2943~2949.]
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  • 收稿日期:2015-07-15
  • 最后修改日期:2016-04-22
  • 錄用日期:2016-05-18
  • 在線發(fā)布日期: 2017-12-01
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