2,TiB2促進(jìn)Al3Ti相的形成,TiB2和Al3Ti共同促進(jìn)晶粒細(xì)化,晶界增多,電子散射幾率增加,同時(shí)過(guò)量的B固溶在Al基體內(nèi),電導(dǎo)率下降了2.55%；當(dāng)B的質(zhì)量分?jǐn)?shù)為0.02%時(shí),在保證合金的抗拉強(qiáng)度不降低的同時(shí),合金的電導(dǎo)率達(dá)到最好,為33.00%IACS。"/>

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含B高導(dǎo)電Al-Si合金顯微組織的觀察與分析
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中國(guó)兵器科學(xué)研究院寧波分院,中南大學(xué)材料科學(xué)與工程學(xué)院,中南大學(xué)材料科學(xué)與工程學(xué)院,中南大學(xué)材料科學(xué)與工程學(xué)院,中南大學(xué)材料科學(xué)與工程學(xué)院,中南大學(xué)材料科學(xué)與工程學(xué)院

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TG146.2

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寧波市創(chuàng)新團(tuán)隊(duì)2014B82001


Observation and Analysis of Microstructure of the B-Containing Highly Conductive Al-Si alloy
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Ningbo Branch of China Academy of Ordnance Science,School of Materials Science and Engineering,Central South University,School of Materials Science and Engineering,Central South University,School of Materials Science and Engineering,Central South University,School of Materials Science and Engineering,Central South University,School of Materials Science and Engineering,Central South University

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    摘要:

    通過(guò)電導(dǎo)率測(cè)量、金相觀察、掃描電鏡分析、透射電鏡分析、X射線衍射分析和電子探針微量分析,研究了B的添加對(duì)鑄造Al-Si合金晶格常數(shù)、晶粒尺寸和導(dǎo)電性能的影響。研究結(jié)果表明：當(dāng)B的質(zhì)量分?jǐn)?shù)低于0.02%時(shí),Al基體內(nèi)各雜質(zhì)元素Ti、Cr、Mn、V均以硼化物的形式從Al基體內(nèi)析出,Al基體內(nèi)的晶格畸變程度明顯降低,電導(dǎo)率提高了6.06%；當(dāng)B的質(zhì)量分?jǐn)?shù)超過(guò)0.02%時(shí),B與Ti作用形成TiB2,TiB2促進(jìn)Al3Ti相的形成,TiB2和Al3Ti共同促進(jìn)晶粒細(xì)化,晶界增多,電子散射幾率增加,同時(shí)過(guò)量的B固溶在Al基體內(nèi),電導(dǎo)率下降了2.55%；當(dāng)B的質(zhì)量分?jǐn)?shù)為0.02%時(shí),在保證合金的抗拉強(qiáng)度不降低的同時(shí),合金的電導(dǎo)率達(dá)到最好,為33.00%IACS。

    Abstract:

    The effects of B addition on the lattice constant, grain size and electrical property of Al-Si casting alloys were investigated by Wheatstone Bridge Conductivity Measurement, Optical Microscope, Scanning Electron Microscope(SEM), Transmission Electron Microscope(TEM),X-Ray Diffraction(XRD) and Electron Probe Micro-Analyzer(EPMA) Analysis. The results indicated that impurities of Ti,Cr,Mn,V were converted from solid solution state to boride in the Al matrix when B content was increased in the range of 0.02%, meanwhile, the degree of lattice distortion decreased which resulted in the increase of the conductivity by 6.06%; When B content was over 0.02%, B and Ti formed TiB2, TiB2 promoted the formation of Al3Ti phase with the increase of B content, which led to grain refinement, crystal distortion increased, the risk of electron scattering enhanced and the excessing of B dissolved in the Al matrix simultaneously, so the conductivity decreased by 2.5%; when B content was 0.02%, the alloy’s electrical property achieved the best and the tensile strength have not reduced, the conductivity was 33.00%IACS.

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劉紅偉,賀小龍,楊昭,王光旭,徐雪璇,路建寧.含B高導(dǎo)電Al-Si合金顯微組織的觀察與分析[J].稀有金屬材料與工程,2017,46(8):2300~2305.[Liu Hongwei, He Xiaolong, Yang Zhao, Wang Guangxu, Xu Xuexuan, Lu Jianning. Observation and Analysis of Microstructure of the B-Containing Highly Conductive Al-Si alloy[J]. Rare Metal Materials and Engineering,2017,46(8):2300~2305.]
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  • 收稿日期:2015-04-30
  • 最后修改日期:2015-06-10
  • 錄用日期:2015-08-11
  • 在線發(fā)布日期: 2017-11-16
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