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Ga、K雙摻雜對N型Bi2Te2.7Se0.3材料熱電性能的影響
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國家自然科學基金 (51161009)；江西省教育廳科技資助項目 (GJJ13722)


Effects of Ga and K Dual Doping on Thermoelectric Properties of N-type Bi2Te2.7Se0.3
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    摘要:

    采用真空熔煉及熱壓方法制備了Ga和K雙摻雜N型Bi2Te2.7Se0.3熱電材料。XRD分析結果表明，Ga和K已經完全固溶到Bi2Te2.7Se0.3晶體結構中，形成了單相固溶體合金。SEM分析表明，材料組織致密且有層狀結構特征。通過Ga和K部分替代Bi, 在300~500 K的大部分溫度范圍內，Ga和K雙摻雜對提高Bi2Te2.7Se0.3的Seebeck系數產生了積極的作用, 同時雙摻雜樣品的電導率也得到明顯的提高。Ga和K雙摻雜樣品的熱導率都大于未摻雜的Bi2Te2.7Se0.3，Ga0.02Bi1.94K0.04Te2.7Se0.3合金在500 K獲得ZT最大值為1.05。

    Abstract:

    N-type Bi2Te2.7Se0.3 thermoelectric materials with Ga and K dual doping were synthesized by vacuum melting and hot pressing. XRD results indicate that Ga and K elements have been completely dissolved into the crystal structure of Bi2Te2.7Se0.3. The single-phase solid solution alloy has been formed. SEM results show that the bulk samples are compact with the laminated structure. Ga and K dual doping increases the Seebeck coefficient of Bi2Te2.7Se0.3 through Ga and K partial substitution of Bi in the most range of 300~500 K, while the electrical conductivity of the dual doped samples is improved. The thermal conductivity of the dual doped samples is higher than that of Bi2Te2.7Se0.3. The maximum ZT value reaches 1.05 at 500 K for Ga0.02Bi1.94K0.04Te3Se0.3 sample.

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段興凱,胡孔剛,丁時鋒,滿達虎,林偉明,金海霞. Ga、K雙摻雜對N型Bi2Te2.7Se0.3材料熱電性能的影響[J].稀有金屬材料與工程,2015,44(1):236~239.[Duan Xingkai, Hu Konggang, Ding Shifeng, Man Dahu, Lin Weiming, Jin Haixia. Effects of Ga and K Dual Doping on Thermoelectric Properties of N-type Bi2Te2.7Se0.3[J]. Rare Metal Materials and Engineering,2015,44(1):236~239.]
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  • 收稿日期:2014-01-19
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  • 在線發(fā)布日期: 2015-05-22
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