2薄膜; 薄膜厚度; 光電特性"/> 2薄膜,繼而采用光刻技術(shù)在薄膜上生長了Ag叉指電極,獲得了MSM結(jié)構(gòu)TiO2基紫外探測器。I-V特性測試結(jié)果表明Ag與TiO2之間表現(xiàn)出優(yōu)良的歐姆接觸特性,所制備探測器為歐姆接觸。此外,TiO2薄膜厚度對探測器的光電性能影響顯著,當(dāng)薄膜厚度達到197 nm時,光電性能達到最高。此時,光電流高出暗電流近2.5個數(shù)量級,紫外光區(qū)的響應(yīng)度高出可見光區(qū)近2個數(shù)量級。所制備Ag/TiO2MSM紫外探測器表現(xiàn)出高靈敏度和可見盲特性。"/>

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MSM結(jié)構(gòu)TiO2基紫外探測器的制備及光電特性研究
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北京航空材料研究院 鋼與稀貴金屬研究所,北京航空材料研究院 鋼與稀貴金屬研究所,北京航空材料研究院 鋼與稀貴金屬研究所,北京航空材料研究院 鋼與稀貴金屬研究所

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中國航空工業(yè)集團公司創(chuàng)新基金 (JK65150307)


Preparation and Photoelectric Properties of Metal-Semiconductor-Metal TiO2 Ultraviolet detectors
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Department of Steel and Rare-Noble Metals,Beijing Institute of Aeronautical Materials,Department of Steel and Rare-Noble Metals,Beijing Institute of Aeronautical Materials,Department of Steel and Rare-Noble Metals,Beijing Institute of Aeronautical Materials,Department of Steel and Rare-Noble Metals,Beijing Institute of Aeronautical Materials

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    摘要:

    采用RF磁控濺射技術(shù)在石英襯底上生長了厚度可調(diào)的銳鈦礦相TiO2薄膜,繼而采用光刻技術(shù)在薄膜上生長了Ag叉指電極,獲得了MSM結(jié)構(gòu)TiO2基紫外探測器。I-V特性測試結(jié)果表明Ag與TiO2之間表現(xiàn)出優(yōu)良的歐姆接觸特性,所制備探測器為歐姆接觸。此外,TiO2薄膜厚度對探測器的光電性能影響顯著,當(dāng)薄膜厚度達到197 nm時,光電性能達到最高。此時,光電流高出暗電流近2.5個數(shù)量級,紫外光區(qū)的響應(yīng)度高出可見光區(qū)近2個數(shù)量級。所制備Ag/TiO2MSM紫外探測器表現(xiàn)出高靈敏度和可見盲特性。

    Abstract:

    Anatase TiO2 thin films were grown on quartz substrates by RF magnetron sputtering. Metal-semiconductor-metal (MSM) detectors with Ag IDT electrodes were then fabricated. The measurement of the I-V characteristics for the detectors shows good ohmic contact. It was found that the thickness of TiO2 layer had an obvious effect on the photoelectronic properties. When TiO2 film thickness is 197 nm, the photocurrent is nearly 2.5 orders of magnitude higher than the dark current and the photoresponse in ultraviolet region is nearly 2 orders of magnitude higher than in visible light region. The high sensitivity and visible blind properties of the obtained devices indicate their potential application as UV detectors with high efficiency and low cost.

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祁洪飛,戴松喦,劉大博,王錦鵬. MSM結(jié)構(gòu)TiO2基紫外探測器的制備及光電特性研究[J].稀有金屬材料與工程,2017,46(10):2781~2784.[Qi Hongfei, Dai Songyan, Liu Dabo, Wang Jinpeng. Preparation and Photoelectric Properties of Metal-Semiconductor-Metal TiO2 Ultraviolet detectors[J]. Rare Metal Materials and Engineering,2017,46(10):2781~2784.]
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  • 收稿日期:2015-08-21
  • 最后修改日期:2016-08-02
  • 錄用日期:2016-09-18
  • 在線發(fā)布日期: 2017-12-01
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