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Ce摻雜GdB6基陰極材料的制備及性能研究
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北京工業(yè)大學(xué),北京工業(yè)大學(xué),北京工業(yè)大學(xué),北京工業(yè)大學(xué),北京工業(yè)大學(xué),北京工業(yè)大學(xué),北京工業(yè)大學(xué)，合肥工業(yè)大學(xué)

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國(guó)家自然科學(xué)基金項(xiàng)目（面上項(xiàng)目50871002）；北京市教委科技計(jì)劃面上項(xiàng)目（KM201510005001）


The Effect of Ce Doping on the preparation and Properties of the GdB6 base Cathode Material
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Beijing University of Technology,Beijing University of Technology,,Beijing University of Technology,Beijing University of Technology,Beijing University of Technology,Beijing University of Technology，Hefei University of Technology

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    摘要:

    以GdB6和CeB6粉末為原料，采用放電等離子燒結(jié)技術(shù)(SPS)制備了高致密的多元稀土六硼化物GdxCe1-xB6(x=0.0-1.0)多晶塊體。系統(tǒng)研究了燒結(jié)溫度對(duì)GdxCe1-xB6多晶塊體的物相組成、力學(xué)性能、電阻率及熱發(fā)射性能的影響。研究結(jié)果表明，在燒結(jié)溫度為1550 ℃，燒結(jié)壓強(qiáng)為50 MPa，保溫5分鐘的工藝條件下，可獲得高致密的GdxCe1-xB6單相塊體材料。燒結(jié)塊體的維氏硬度可達(dá)24.02 GPa。熱電子發(fā)射性能測(cè)試結(jié)果表明，適量的Gd摻雜可以顯著提高電子發(fā)射性能，其中Gd0.1Ce0.9B6成分塊體具有最佳的熱發(fā)射性能，在1600 ℃，4 kV外加電壓條件下，發(fā)射電流密度達(dá)到101.57 A?cm-2，零場(chǎng)電流密度達(dá)到21.94 A?cm-2，平均有效逸出功為2.34 eV，優(yōu)于同一條件下GdB6和CeB6塊體的熱發(fā)射性能。

    Abstract:

    In this paper, GdB6and CeB6 were used as raw materials,and hexaborides GdxCe1-xB6(x=0.0-1.0) bulk materials were successfully prepared by the spark plasma sintering (SPS). The effects of Gd doping on the phase composition, the mechanical properties, the resistivity and the thermionic emission properties of CeB6 base material were studied systematically. The research results show that high density GdxCe1-xB6 single-phase block material can be obtained by sintering at a temperature of 1550 oC, pressure of 50 MPa and holding time 5 min And the Vickers hardness of sintered samples can reach 24.02 Gpa.The thermionic emission properties results show that the right amount of Gd doped can significantly improve the electron emission properties of bulk materials, Gd0.1Ce0.9B6 composition block has the best thermal emission properties, of which the emission current density is 101.57A/cm2, the zero field current density is 21.94A/cm2 under an applied voltage condition of 4kV at 1600 oC, and is better than GdB6 and CeB6 block sample under the same conditions.

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梁超龍,張忻,劉洪亮,張繁星,王楊,鄭亮,張久興. Ce摻雜GdB6基陰極材料的制備及性能研究[J].稀有金屬材料與工程,2016,45(12):3267~3270.[Liang Chaolong, Zhang Xin, liu hongliang, Zhang Fanxing, Wang Yang, Zheng Liang, Zhang Jiuxing. The Effect of Ce Doping on the preparation and Properties of the GdB6 base Cathode Material[J]. Rare Metal Materials and Engineering,2016,45(12):3267~3270.]
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  • 收稿日期:2014-09-28
  • 最后修改日期:2015-06-12
  • 錄用日期:2015-08-11
  • 在線發(fā)布日期: 2017-02-06
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