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基于數(shù)值模擬的太陽能直拉硅單晶熱場降耗研究
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上海大學(xué),上海大學(xué),上海大學(xué),上海大學(xué)

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The Study of Power Consumption on CzochralskiSilicon Single Crystal Growth Process for Photovoltaic through Numerical Simulat
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Shanghai University,Shanghai University,Shanghai University,Shanghai University

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    通過計(jì)算機(jī)數(shù)值模擬仿真技術(shù)分析了TDR-95A-ZJS型22英寸太陽能直拉硅單晶熱場結(jié)構(gòu)中影響能耗的主要因素?；谀M結(jié)果提出了通過改變部分熱場結(jié)構(gòu)及保溫氈布局等優(yōu)化措施可有效降低原有熱場功耗。實(shí)際生產(chǎn)實(shí)驗(yàn)表明，優(yōu)化后的熱場在保證晶體生長原有質(zhì)量前提下較原有熱場節(jié)能29%。

    Abstract:

    Factors influencing the heater power consumption on 22inch hotzone in TDR-95A-ZJS Czochrolaski crystal growth furnace for photovoltaic application are analyzed by means of numerical modeling and simulations. Based on numerical simulation results, hotzone optimization through structure and graphite insulator layout modifications targeted for heater power reduction is proposed. Physical crystal growthexperiments show that the heater power consumption is reduced by 29% after hotzone optimization while the crystal quality remains very similar to the ones obtained by original hotzone.

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鄧先亮,任忠鳴,鄧康,吳亮.基于數(shù)值模擬的太陽能直拉硅單晶熱場降耗研究[J].稀有金屬材料與工程,2016,45(11):2907~2911.[dengxianliang, Ren Zhongming, Deng Kang, Wu Liang. The Study of Power Consumption on CzochralskiSilicon Single Crystal Growth Process for Photovoltaic through Numerical Simulat[J]. Rare Metal Materials and Engineering,2016,45(11):2907~2911.]
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  • 收稿日期:2014-08-03
  • 最后修改日期:2014-08-29
  • 錄用日期:2014-09-28
  • 在線發(fā)布日期: 2016-12-08
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