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磁控濺射制備ZnO緩沖層薄膜的微觀結(jié)構(gòu)和光學(xué)性能
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上海市科技攻關(guān)項(xiàng)目 (08110511600)；上海市教委重點(diǎn)學(xué)科項(xiàng)目 (J50503)


Microstructure and Optical Properties of ZnO Thin Film Buffer Layer Deposited by Magnetron Sputtering
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    摘要:

    研究了襯底溫度、濺射氣壓對磁控濺射沉積ZnO緩沖層薄膜的微觀結(jié)構(gòu)、表面形貌和光學(xué)性能的影響。結(jié)果表明，襯底溫度、濺射氣壓對ZnO緩沖層薄膜表面形貌、晶粒尺寸、禁帶寬度和光學(xué)透過率等有較大影響。綜合分析得出最佳的制備ZnO緩沖層薄膜的工藝為250 ℃、0.6 Pa。在此工藝下制備的ZnO緩沖層薄膜具有很好的ZnO(002)面c軸擇優(yōu)取向，結(jié)構(gòu)致密、尺寸均勻，禁帶寬度為3.24 eV，可見光平均透過率為86.93%，符合作CIGS太陽能電池緩沖層的要求

    Abstract:

    The influences of substrate temperature and sputtering pressure on microstructure and optical properties of ZnO thin film buffer layer deposited by magnetron sputtering were investigated. The results show that the substrate temperature and the sputtering pressure have a great effect on the surface morphology, average grain size, forbidden band width and optical transmittance of ZnO buffer layer. Through the comprehensive analysis, it is concluded that the optimal ZnO buffer layer film can be deposited at substrate temperature of 250 oC and sputtering pressure of 0.6 Pa. Under this technical condition, ZnO buffer layer film presents well (002) preferred orientation in c axis, compact and uniform structure with the forbidden band width of 3.24 eV and average visible light transmittance of 86.93%, satisfying the requirement of the buffer layer of CIGS solar cell

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王玉偉,劉 平,李 偉,劉新寬,馬鳳倉,陳小紅,何代華.磁控濺射制備ZnO緩沖層薄膜的微觀結(jié)構(gòu)和光學(xué)性能[J].稀有金屬材料與工程,2014,43(9):2203~2208.[Wang Yuwei, Liu Ping, Li Wei, Liu Xinkuan, Ma Fengcang, Chen Xiaohong, He Daihua. Microstructure and Optical Properties of ZnO Thin Film Buffer Layer Deposited by Magnetron Sputtering[J]. Rare Metal Materials and Engineering,2014,43(9):2203~2208.]
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  • 收稿日期:2013-10-10
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  • 在線發(fā)布日期: 2015-02-25
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