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氣體放電伏安特性正反歐姆區(qū)間對(duì)TiN薄膜微觀結(jié)構(gòu)及性能的影響
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西安理工大學(xué)

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中圖分類號(hào):

TB43

基金項(xiàng)目:

國(guó)家自然科學(xué)基金資助（項(xiàng)目號(hào)51271144）


Influence of positive-Ohm and anti-Ohm sections of gas discharge volt-ampere characteristic on microstructure and properties
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Xi'an University of Technology

Fund Project:

The Natural Science Foundation of Jiangsu Province of China (BK2009104); The Innovation Program of Graduated Student of Jiangsu Province (CXZZ12-731, CXLX11-0388)

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    摘要:

    采用脈沖控制模式將氣體放電伏安特性由磁控濺射離子鍍的“正歐姆” 區(qū)間引入到“反歐姆”區(qū)間，并在不同靶電流密度下制備了TiN薄膜。研究了正反歐姆區(qū)間對(duì)薄膜微觀結(jié)構(gòu)及性能的影響。結(jié)果表明：在靶電流密度（Itd）大于0.2A?cm-2的反歐姆區(qū)間，薄膜具有良好的表面質(zhì)量和致密程度；且薄膜的硬度和膜基結(jié)合強(qiáng)度分別由正歐姆區(qū)間Itd為0.11A?cm-2的18.9GPa、4.5N提升到反歐姆區(qū)間Itd為0.38 A?cm-2的25.8GPa、18N。

    Abstract:

    The volt-ampere characteristics of gas discharge was introduced form positive-Ohm of magnetron sputtering ion plating into anti-Ohm section using pulse mode and deposited TiN films under different target current density. The influences of positive-Ohm and anti-Ohm sections on the microstructure and properties of the films were studied. The results indicated that in the anti-Ohm section with target current density (Itd) is more than 0.2A?cm-2, the films have good surface quality and density degree, and the hardness and membrane-binding strength were upgraded from 18.9GPa、4.5N in positive-Ohm section (Itd=0.11A?cm-2) to 25.8GPa、18N in anti-Ohm section (Itd=0.38 A?cm-2) respectively.

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郝娟.氣體放電伏安特性正反歐姆區(qū)間對(duì)TiN薄膜微觀結(jié)構(gòu)及性能的影響[J].稀有金屬材料與工程,2016,45(9):2439~2443.[haojuan. Influence of positive-Ohm and anti-Ohm sections of gas discharge volt-ampere characteristic on microstructure and properties[J]. Rare Metal Materials and Engineering,2016,45(9):2439~2443.]
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  • 收稿日期:2014-07-27
  • 最后修改日期:2014-09-17
  • 錄用日期:2014-11-20
  • 在線發(fā)布日期: 2016-10-09
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