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SiO2基底表面VO2薄膜的生長模式及相變性能分析
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國家自然科學基金項目 (61271075);中物院-四川大學協(xié)同創(chuàng)新聯(lián)合基金 (0082604132225)


SiO2基底表面VO2薄膜的生長模式及相變性能分析
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    摘要:

    采用無機溶膠-凝膠法在二氧化硅基底上制備不同厚度的二氧化釩薄膜,通過X射線光電子能譜、X射線衍射和場發(fā)射掃描電子顯微鏡分析薄膜的化學組成和微觀結(jié)構,并利用變溫傅里葉變換紅外光譜對薄膜在紅外波段的相變性能進行檢測。結(jié)果發(fā)現(xiàn):薄膜均沿(110)晶面擇優(yōu)生長;隨厚度增加,其結(jié)晶度提高,表面晶粒明顯增大,大小分布越不均勻,并導致薄膜在紅外波段的低溫和高溫透過率均降低,滯后溫寬變窄,相變陡然性增強。

    Abstract:

    VO2 films with different thicknesses were deposited on SiO2 substrate by an inorganic sol-gel method. The variation of stoichiometry, crystalline structure and surface morphology of the films with thicknesses were analyzed by X-ray photoelectron spectroscopy, X-ray diffraction and scanning electron microscopy, respectively. Furthermore, the effects of the composition and microstructure on the phase transition property of the films were studied in the mid-infrared range. The results indicate that all the films exhibit a (110) preferred orientation; the crystallinity is enhanced, and the grain size is improved with broader distribution in the thicker films. Accordingly, the thicker films show reduced transmission before and after the phase transition, narrower hysteresis loop and larger transition slope.

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岳 芳,黃婉霞,施奇武,鄧賢進,王 成,張敬雨,李丹霞. SiO2基底表面VO2薄膜的生長模式及相變性能分析[J].稀有金屬材料與工程,2014,43(8):1955~1958.[Yue Fang, Huang Wanxia, Shi Qiwu, Deng Xianjin, Wang Cheng, Zhang Jingyu, Li Danxia. SiO2基底表面VO2薄膜的生長模式及相變性能分析[J]. Rare Metal Materials and Engineering,2014,43(8):1955~1958.]
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  • 收稿日期:2013-08-21
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  • 在線發(fā)布日期: 2015-01-04
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