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磁控濺射制備NiO/Ni多層膜的結(jié)構(gòu)和光電性能
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陜西省自然科學(xué)基金資助項目 (2010JQ6008); 國家自然科學(xué)基金 (541001085); (51171148); 陜西省重點學(xué)科建設(shè)專項資金資助項目


Structure and Photoelectric Properties of NiO/Ni Multilayers Prepared by Magnetron Sputtering
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    摘要:

    利用反應(yīng)磁控濺射和常規(guī)磁控濺射方法交替沉積了NiO/Ni納米多層膜，研究了不同退火環(huán)境下多層膜的相結(jié)構(gòu)、微觀結(jié)構(gòu)演化及光電性能。XRD和TEM結(jié)果表明，沉積態(tài)薄膜呈現(xiàn)明顯的NiO和Ni交替多層結(jié)構(gòu)；大氣退火的NiO/Ni多層膜被氧化成沿(111)晶面擇優(yōu)生長的NiO薄膜；而真空退火的NiO/Ni薄膜仍然保持著明顯的多層結(jié)構(gòu)，各層膜的結(jié)晶程度提高。沉積態(tài)和真空退火態(tài)的NiO/Ni多層膜呈現(xiàn)低可見光透過率和低電阻率的特點，電阻率達到10-5 Ω·cm數(shù)量級；大氣退火的NiO/Ni多層膜呈現(xiàn)49.3%可見光平均透過率和高的電阻特性

    Abstract:

    NiO/Ni multilayers were deposited alternately by reactive magnetron sputtering and conventional magnetron sputtering. Phase structure, microstructure and photoelectric properties in different annealing environments were studied. XRD and TEM results indicate that NiO and Ni layers appear alternately in as-grown multilayers. Only NiO(111) preferred orientation is found in the films after atmosphere annealing, but multilayer structure still exist in the films after vacuum annealing, whose crystallization increases obviously. Both the as-grown and vacuum annealed films show a low visible light transmittance and a resistivity as low as 10-5 Ω·cm, while the films annealed in the air exhibit a high resistivity as well as a low transmittance of 49.3%.

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趙志明,馬二云,張曉靜,張國君,游才印,白力靜,蔣百靈.磁控濺射制備NiO/Ni多層膜的結(jié)構(gòu)和光電性能[J].稀有金屬材料與工程,2014,43(7):1732~1735.[Zhao Zhiming, Ma Eryun, Zhang Xiaojing, Zhang Guojun, You Caiyin, Bai Lijing, Jiang Bailing. Structure and Photoelectric Properties of NiO/Ni Multilayers Prepared by Magnetron Sputtering[J]. Rare Metal Materials and Engineering,2014,43(7):1732~1735.]
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  • 收稿日期:2013-07-18
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  • 在線發(fā)布日期: 2014-12-15
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