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氬離子濺射刻蝕對(duì)Ti-Si-C納米復(fù)合薄膜XPS分析的影響
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Influence of Ar Ion Sputter-Etching on XPS Analysis of Ti-Si-C Nanocomposite Film
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    摘要:

    通過(guò)中頻非平衡磁控濺射Ti80Si20復(fù)合靶在氬氣和甲烷混合氣氛中沉積Ti-Si-C復(fù)合薄膜。采用X射線衍射儀、Raman光譜和X射線光電子能譜分析薄膜微結(jié)構(gòu)。結(jié)果顯示：制備的薄膜為非晶碳(a-C:Si:H)包裹約10 nm TiC晶粒的復(fù)合結(jié)構(gòu)，氬離子濺射刻蝕對(duì)XPS分析結(jié)果有顯著影響。隨氬離子刻蝕濺射刻蝕時(shí)間增加，薄膜表面C、O原子含量明顯降低，而Ti、Si原子含量增加。氬離子濺射刻蝕導(dǎo)致薄膜非晶碳相發(fā)生石墨化轉(zhuǎn)變，即sp3C-C(H)/sp2C-C比率減小，同時(shí)，C-Ti*/C-Ti和 C-(Ti+Ti*)/C-C強(qiáng)度比明顯增加。

    Abstract:

    The Ti-Si-C nanocomposite film was deposited in gas mixtures of Ar and CH4 by middle frequency unbalanced magnetron sputtering Ti80Si20 composite targets. The microstructure of the film was investigated by X-ray diffraction, Raman spectrum and X-ray photoelectron spectroscopy. The results show that the film exhibits nc-TiC/a-C:Si:H nanocomposite structure with about 10 nm nanocrystallites TiC embedded in hydrocarbon (a-C:Si:H) matrix. The results of XPS analysis strongly depend on Ar+ sputter-etching. The C and O content on the film surface distinctly decreases, while the Ti and Si content gradually increase with the increasing of Ar+ sputter-etching time. It is found that Ar+ sputter-etching results in the graphitization of the amorphous carbon phase in the nanocomposite film. In other words, the sp3C-C(H)/sp2C-C ratio decreases with the increasing of Ar+ sputter-etching time. In addition, the C-Ti*/C-Ti and C-(Ti+Ti*)/C-C ratios obviously increase.

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姜金龍,陳 娣,王 瓊,楊 華,魏智強(qiáng).氬離子濺射刻蝕對(duì)Ti-Si-C納米復(fù)合薄膜XPS分析的影響[J].稀有金屬材料與工程,2014,43(4):977~981.[Jiang Jinlong, Chen Di, Wang Qiong, Yang Hua, Wei Zhiqiang. Influence of Ar Ion Sputter-Etching on XPS Analysis of Ti-Si-C Nanocomposite Film[J]. Rare Metal Materials and Engineering,2014,43(4):977~981.]
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  • 收稿日期:2013-04-11
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  • 在線發(fā)布日期: 2014-07-30
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