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磁控濺射Co/AZO納米復(fù)合薄膜的結(jié)構(gòu)及光學(xué)性能
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陜西省自然科學(xué)基金 (2010JQ6008);陜西省科學(xué)研究計(jì)劃 (21080209JK608);陜西省重點(diǎn)學(xué)科建設(shè)專項(xiàng)資金資助項(xiàng)目


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    摘要:

    利用對(duì)靶磁控濺射交替沉積技術(shù)在不同Co靶電流下沉積Co/AZO納米復(fù)合薄膜,并對(duì)其進(jìn)行真空退火。研究了Co靶電流對(duì)薄膜的結(jié)構(gòu)及光學(xué)性能的影響。結(jié)果表明,沉積態(tài)薄膜晶化程度隨Co靶電流增加而降低,未發(fā)現(xiàn)Co的相關(guān)衍射峰;真空退火后,薄膜結(jié)晶性明顯改善,0.3 A薄膜中出現(xiàn)了Co納米顆粒,當(dāng)Co靶電流增大到0.5 A時(shí)還發(fā)現(xiàn)了CoO納米顆粒。UV-Vis光譜顯示薄膜透過率隨Co靶電流增加而降低,退火后透過率明顯提高;光譜中還出現(xiàn)了高自旋態(tài)Co2+(d7)電子躍遷的3個(gè)特征吸收峰,0.2 A薄膜中尤其顯著

    Abstract:

    Co/AZO nanocomposite films were deposited by magnetron sputtering technique in alternating deposition (AD) method under different Co target currents. The influences of Co target current on the structure and optical properties of the films were studied. XRD and TEM results show that the crystallization of the as-grown films reduces with the increasing of Co target current, and no Co diffraction peaks are observed. Crystallization is significantly improved after annealing, while CoO nanoparticals are found in the annealed films under Co target current of 0.5 A as well as Co nanoparticals in 0.3 A films. UV-Vis results indicate that transmittance declines with the increase of Co target current, but notably increases after annealing. Three characteristic absorption peaks corresponding to the electronic transition of high spin states Co2+ (d7) also appear in the UV-Vis spectra, particularly in 0.2 A films

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趙志明,張曉靜,馬二云,白力靜,張國(guó)君,游才印,蔣百靈.磁控濺射Co/AZO納米復(fù)合薄膜的結(jié)構(gòu)及光學(xué)性能[J].稀有金屬材料與工程,2014,43(1):145~149.[Zhao Zhiming, Zhang Xiaojing, Ma Eryun, Bai Lijing, Zhang Guojun, You Caiyin, Jiang Bailing.[J]. Rare Metal Materials and Engineering,2014,43(1):145~149.]
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  • 收稿日期:2013-01-28
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  • 在線發(fā)布日期: 2014-04-16
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