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Resistive Switching Behavior of Hafnium Oxide Thin Film Grown by Magnetron Sputtering
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Resistive Switching Behavior of Hafnium Oxide Thin Film Grown by Magnetron Sputtering
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the?Research?Fund?of?the?State?Key?Laboratory?of?Solidification?Processing?(NWPU) (58-TZ-2011); the?“111”Project?under?Grant (B08040); Northwestern?Polytechnical?University?(NPU)?Fundamental?Research?(?JC201111)；National Natural Science Foundation of China (51202196)

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    摘要:

    采用磁控濺射法，以ITO/Glass為襯底，制備了具有電阻轉(zhuǎn)變特性的HfO2薄膜。X射線光電子能譜（XPS）分析發(fā)現(xiàn)，薄膜中的Hf、O元素不成化學(xué)計(jì)量比，薄膜中可能存在大量氧空位。電學(xué)測試結(jié)果表明，HfO2薄膜表現(xiàn)出明顯的雙極電阻轉(zhuǎn)變特性，并且表現(xiàn)出良好的可靠性（室溫下可重復(fù)測試102次以上）和穩(wěn)定的保持性能（0.5 V偏壓下保持104 s以上），高低阻態(tài)比值達(dá)到104?；赬PS以及電學(xué)分析，薄膜的導(dǎo)電過程可用與氧空位相關(guān)的空間電荷限制電流模型解釋

    Abstract:

    The HfO2 thin films with resistive switching behaviors were grown on indium tin oxide (ITO) /Glass substrates by radio-frequency (RF) magnetron sputtering method. The results of electrical tests indicate that HfO2 thin films show a bipolar resistive switching behavior. Using Ti as a buffer layer on the cathodal side of the memory cell, relatively reliable endurance (>2×102 cycles at 20 oC) and long data retention time (>104s at 20 oC) have been demonstrated, and the high-resistance to low-resistance ratio can reach 104. Based on the electrical property test results, the phenomena can be correlated with oxygen-vacancy-related traps. Space charge limited current (SCLC) mechanism is believed to be the reason for the resistive switching from the OFF state to the ON state

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李艷艷,劉正堂,譚婷婷. Resistive Switching Behavior of Hafnium Oxide Thin Film Grown by Magnetron Sputtering[J].稀有金屬材料與工程,2014,43(1):24~27.[Li Yanyan, Liu Zhangtang, Tan Tingting. Resistive Switching Behavior of Hafnium Oxide Thin Film Grown by Magnetron Sputtering[J]. Rare Metal Materials and Engineering,2014,43(1):24~27.]
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  • 收稿日期:2013-03-27
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  • 在線發(fā)布日期: 2014-04-16
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