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One-Step Preparation of β-Ga2O3 Nanomaterial and Research the Electrical Transport Properties at High Temperature
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One-Step Preparation of β-Ga2O3 Nanomaterial and Research the Electrical Transport Properties at High Temperature
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Supported by the Yong Scholars Science Foundation of Lanzhou Jiaotong University (2011037)

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    摘要:

    用熱蒸發(fā)化學(xué)氣相沉積法成功制備了β-Ga2O3納米材料, 并研究了該納米材料在高溫下的電學(xué)特性。Ｘ射線衍射分析顯示, 產(chǎn)物為單斜結(jié)構(gòu)的β-Ga2O3。掃描電子顯微鏡及透射電鏡測(cè)試表明，納米帶的寬度小于100 nm, 長度有幾微米; 較大氧流量時(shí)制備出β-Ga2O3納米晶粒結(jié)構(gòu), 晶粒尺度在80~150 nm。電學(xué)特性的測(cè)試表明：當(dāng)溫度低于800 ℃時(shí), 納米帶電導(dǎo)率幾乎不變，當(dāng)溫度高于800 ℃以上時(shí)，電導(dǎo)率和溫度呈指數(shù)關(guān)系

    Abstract:

    Gallium oxide (β-Ga2O3) nanomaterials have been prepared from gallium and oxygen by thermal evaporation in argon atmosphere, and the electrical transport properties have been examined at high temperature. X-ray diffraction (XRD) reveals that the synthesized products are monoclinic gallium oxide, and it is further confirmed by electron diffraction of transmission electron microscope (TEM). The observation of scanning electron microscope (SEM) reveals that β-Ga2O3 nanobelt width is less than 100 nm and the length is several micrometers. The electricity property was studied at different high temperatures

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馬海林,李 艷. One-Step Preparation of β-Ga2O3 Nanomaterial and Research the Electrical Transport Properties at High Temperature[J].稀有金屬材料與工程,2013,42(11):2245-2247~.[Ma Hailin, Li Yan. One-Step Preparation of β-Ga2O3 Nanomaterial and Research the Electrical Transport Properties at High Temperature[J]. Rare Metal Materials and Engineering,2013,42(11):2245-2247~.]
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  • 收稿日期:2012-11-15
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