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Influence of Substrate Temperature on the Microstructure of Sc and ScD2 Films
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Influence of Substrate Temperature on the Microstructure of Sc and ScD2 Films
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Science Foundation of China Academy of Engineering Physics (2010A0301011); National Natural Science Foundation of China (50871106)

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    摘要:

    采用電子束沉積的方法在底襯Mo (Rq≈5~8.63 nm)上制備了厚度為2~3 μm的Sc膜，再將Sc膜在Sievert真空系統(tǒng)中進行吸氘。結(jié)果表明：在底襯溫度為623, 823, 1023 K時，Sc膜呈現(xiàn)出柱狀結(jié)構(gòu)，且具有(002)的擇優(yōu)生長；隨著沉積溫度從623 K增大到1023 K，Sc膜的(002)擇優(yōu)生長變強，晶

    Abstract:

    Scandium films with thickness of ~ 2~3 μm were deposited on Mo substrates with a surface roughness Rq≈5~8.63 nm. Subsequently, the films were converted to scandium dideuteride (ScD2) in the Sievert’s apparatus. A novel substrate preparation process has

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吳清英,邴文增,龍興貴,周曉松,劉錦華,羅順忠. Influence of Substrate Temperature on the Microstructure of Sc and ScD2 Films[J].稀有金屬材料與工程,2013,42(7):1342~1346.[Wu Qingying, Bing Wenzeng, Long Xinggui, Zhou Xiaosong, Liu Jinhua, Luo Shunzhong. Influence of Substrate Temperature on the Microstructure of Sc and ScD2 Films[J]. Rare Metal Materials and Engineering,2013,42(7):1342~1346.]
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  • 收稿日期:2012-07-25
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