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基片溫度對鈮摻雜ITO透明導(dǎo)電薄膜性能的影響
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Effects of Substrate Temperature on the Properties of Nb-Doped ITO Thin Films
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    摘要:

    采用磁控濺射法以鈮(Nb)摻雜氧化銦錫（ITO）為靶材制備了厚度為300 nm的ITO:Nb薄膜，研究了不同基底溫度下，薄膜的結(jié)構(gòu)、導(dǎo)電性和可見光區(qū)的透過率。XRD分析表明所制備的ITO:Nb薄膜均為In2O3相；AFM顯示ITO:Nb薄膜的均方根粗糙度隨著溫度的升高逐漸變大；薄膜的電阻率隨著溫度的升高逐漸減小，在300 ℃時得到最小值1.2×10-4 Ω·cm。電阻率下降主要是因為霍耳遷移率增大和載流子濃度逐漸增加。ITO:Nb薄膜在可見光內(nèi)的平均透過率均大于87%，且隨著溫度的升高，吸收邊發(fā)生“紅移”，禁帶寬度逐漸增加

    Abstract:

    ITO:Nb thin films with the thickness of 300 nm were prepared by magnetron sputtering using a ceramic niobium doped ITO target at the temperature from room temperature to 300 °C. The structure, conductivity, and the optical transmission in the visible region of ITO:Nb films were investigated. The results of XRD analysis indicate that ITO:Nb thin films are In2O3 single phase. AFM images show that the surface roughness of the film increases with the temperature increasing. The resistivity decreases as the temperature increasing, reaching a minimum value of 1.2×10-4 Ω·cm at 300 °C due to the rising of both Hall mobility and carrier concentration. The average transmittance of films in the visible light region is over 87%. The optical band gap becomes wider and red shift of the absorption edge takes place with the rising of the temperature, which is coincident with the variation trend of the carrier concentration

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馬春紅,馬瑞新,李士娜,扈百直,鐘景明,朱鴻民.基片溫度對鈮摻雜ITO透明導(dǎo)電薄膜性能的影響[J].稀有金屬材料與工程,2013,42(5):1043~1047.[Ma Chunhong, Ma Ruixin, Li Shina, Hu Baizhi, Zhong Jingming, Zhu Hongmin. Effects of Substrate Temperature on the Properties of Nb-Doped ITO Thin Films[J]. Rare Metal Materials and Engineering,2013,42(5):1043~1047.]
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  • 收稿日期:2012-04-15
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