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基片偏壓模式對高功率脈沖磁控濺射CrN薄膜結(jié)構(gòu)及成分影響研究
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國家自然科學(xué)基金資助（10975041；10905013）


Effect of Bias Modes on Structures and Composition of CrN Films Prepared by High Power Pulsed Magnetron Sputtering
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    摘要:

    針對高功率脈沖磁控濺射（HPPMS）的缺點，結(jié)合沉積技術(shù)（PBII&D）技術(shù)，提出了一種新的處理方法——高功率脈沖磁控放電等離子體離子注入與沉積技術(shù)（HPPMS-PIID）。本實驗采用該技術(shù)在不銹鋼基體上制備了CrN薄膜，分別采用3種偏壓模式：無偏壓、–100 V直流偏壓和–15 kV脈沖偏壓，對比研究了CrN薄膜形貌、結(jié)構(gòu)、成分及性能發(fā)生的變化。結(jié)果表明：該方法制備的薄膜表面平整、晶粒排列致密，呈不連續(xù)的柱狀晶生長。相結(jié)構(gòu)單一，主要是CrN (200)相。由于負(fù)高壓脈沖將大部分進(jìn)入鞘層的離子都吸引到工件沉積，薄膜沉積速率得到較大提高。另外強(qiáng)烈的高能離子的注入與轟擊，使得薄膜的結(jié)合力高達(dá)57.7 N。

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    A new processing technique was proposed called High Power Pulsed Magnetron Sputtering-Plasma Ion Implantation & Deposition (HPPMS-PIID) based on High Power Pulsed Magnetron Sputtering (HPPMS) and Plasma-Based Ion Implantation & Deposition (PBII&D) processing. In this paper, CrN films were prepared by this technique and the surface morphologies, structure, composition and properties were studied compared with those of the CrN films fabricated by conventional HPPMS biased by DC–100 V and no bias. Once high voltage is applied, the film shows a smooth surface, very dense packed grains, and a discontinuous columnar structure. A highest intensity of CrN(200) preferential orientation and best adhesion were obtained by HPPMS-PIID due to the highly energetic ion implantation and bombardment. Compared with that of conventional HPPMS, high deposition rate was achieved in HPPMS-PIID since most ions were attracted into the sheath induced by negative high-voltage pulse, and consequently were deposited on the substrate.

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吳忠振,田修波,鞏春志,楊士勤.基片偏壓模式對高功率脈沖磁控濺射CrN薄膜結(jié)構(gòu)及成分影響研究[J].稀有金屬材料與工程,2013,42(2):405~409.[Wu Zhongzhen, Tian Xiubo, Gong Chunzhi, Yang Shiqin. Effect of Bias Modes on Structures and Composition of CrN Films Prepared by High Power Pulsed Magnetron Sputtering[J]. Rare Metal Materials and Engineering,2013,42(2):405~409.]
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  • 收稿日期:2012-02-19
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