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Beryllium thin films with a thickness of 400~2100 nm and root of mean square roughness Rq<6.0 nm were grown on the SiO2 substrate by the evaporation deposition method. X-ray diffraction analysis indicates that Be thin films with different thickness consist of hcp structure α-Be phase. As the evaporation temperature increases from 1243 to 1403 K, the deposition rate of Be atom increases rapidly, the average diameter of α-Be crystalline grain becomes 3 times larger, and its preferential orientation changes remarkably. The island grains on the thin film surface show a transition from polygon grain to hexagon grain. Otherwise, cross section microstructures of thin films are mainly characterized by column crystal, and they are perpendicular to the SiO2 substrate and of directional array. Furthermore, the calculated growth velocities of Be thin films are in good agreement with experimental results. The growth velocities are directly proportional to the equilibrium vapor pressure, and increase dramatically with the evaporation temperatures rising.