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Investigation of CMP of Ni in the Preparation Process of Micro-Electro-Mechanical System Devices
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Investigation of CMP of Ni in the Preparation Process of Micro-Electro-Mechanical System Devices
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NSFC(50975002); Education Department of Anhui Province of China(KJ2009A120）

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    摘要:

    利用自制的拋光液對高純鎳片進(jìn)行化學(xué)機(jī)械拋光，研究化學(xué)機(jī)械拋光過程中拋光壓力、pH值、H2O2濃度、絡(luò)合劑種類及其濃度、SiO2濃度等參數(shù)對拋光速率的影響。結(jié)果表明在拋光壓力為13.79 kPa、H2O2濃度為0.5%，pH值為3.0，SiO2濃度為0.5%，絡(luò)合劑EDTA及其濃度為1%時，得到最大拋光速率為312.3 nm/min; 在拋光壓力為13.79 kPa、pH值為4.0、SiO2濃度為1%、絡(luò)合劑EDTA為1%、H2O2濃度為1%條件下拋光得到的鎳片表面質(zhì)量較好，表面粗糙度Ra達(dá)到5 nm。并利用電化學(xué)手段研究了鎳片在拋光液中的溶解與鈍化行為

    Abstract:

    CMP (chemical mechanical polish) experiments were carried out by using high purity nickel and home-made slurry. The effects of polishing down force, pH value, H2O2 concentration, chelating agent?species and their concentration as well as particle concentration on the material removal rate (MRR) were investigated. The results reveal that MRR can reach 312.3 nm/min under the following conditions: the down force is 13.79 kPa, H2O2 concentration is 0.5% (mass fraction), pH = 3.0, SiO2 concentration is 0.5% and EDTA concentration is 1%, The better surface quality can be obtained under the following conditions: the down force is 13.79 kPa, H2O2 concentration is 1%, pH = 4.0, SiO2 concentration is 1%, EDTA concentration is 1%, and the surface roughness Ra can reach 5 nm.

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儲向峰,李秀金,董永平,張王兵,白林山. Investigation of CMP of Ni in the Preparation Process of Micro-Electro-Mechanical System Devices[J].稀有金屬材料與工程,2012,41(4):585~588.[Chu Xiangfeng, Li Xiujin, Dong Yongping, Zhang Wangbing, Bai Linshan. Investigation of CMP of Ni in the Preparation Process of Micro-Electro-Mechanical System Devices[J]. Rare Metal Materials and Engineering,2012,41(4):585~588.]
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  • 收稿日期:2011-04-25
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