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Effects of Indium Doping on the Properties of Cd1-xMnxTe Crystals
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Effects of Indium Doping on the Properties of Cd1-xMnxTe Crystals
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Special Foundation for Basic Scientific Research of Central Colleges, Chang’an University (CHD2010JC141); State Key Laboratory of Solidification Processing in NWPU (SKLSP 201012 ).

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    摘要:

    通過近紅外和紅外透過譜表征，確定出摻銦后碲錳鎘晶體透過率迅速下降，這是晶格吸收和自由載流子吸收共同作用的結(jié)果；而光致發(fā)光譜的分析結(jié)果表明，摻雜后施主-受主對峰增加，受主束縛激子峰減弱，且隨著In含量的增加，受主束縛激子峰消失，只剩下施主-受主對峰。這一系列變化是因為替代的In原子作為施主補償了Cd空位的緣故。拉曼光譜的測量顯示，In摻雜導致“類CdTe”的縱向光學聲子峰減弱；而磁學的測試結(jié)果則說明In的引入幾乎不引起碲錳鎘晶體磁化強度的變化。

    Abstract:

    The near-infrared (NIR) and infrared (IR) transmissions of Indium (In) doped Cd1-xMnxTe (CMT) crystals were measured, and both the results show that the transmittances decline dramatically after doping. The reason is that the lattice absorption and free carriers absorption together determine the IR absorption of the crystals. The photoluminescence (PL) spectra measurements show that the donor-acceptor pair (D, A) peak is increased after doping, but the acceptor-bound exciton (A0, X) peak is reduced. With increasing of In concentrations the (A0, X) peak disappears and the (D, A) peak stands out completely. This series of changes result from that the substitutional In atoms act as donors and compensate the point defects VCd. The Raman scattering (RS) measurements exhibit that In doping makes the RS spectra of the longitudinal-optic (LO1) phonon peak a slight reduction, where LO1 is relative to the phonon peak of “CdTe-like”. Magnetization measurements show that the effects of In-doping on the magnetization of CMT are insignificant.

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欒麗君,介萬奇,王 濤,杜園園. Effects of Indium Doping on the Properties of Cd1-xMnxTe Crystals[J].稀有金屬材料與工程,2012,41(3):383~386.[Luan Lijun, Jie Wanqi, Wang Tao, Du Yuanyuan. Effects of Indium Doping on the Properties of Cd1-xMnxTe Crystals[J]. Rare Metal Materials and Engineering,2012,41(3):383~386.]
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  • 收稿日期:2011-07-05
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