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Direct Tunneling and Storage of Electrons in Ni Nanocrystals Embedded within MOS Structure
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Direct Tunneling and Storage of Electrons in Ni Nanocrystals Embedded within MOS Structure
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Nature Science Foundation of Zhejiang Province of China (Y4090148); National Nature Science Foundation of China (60776058)

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    摘要:

    研究了鎳納米晶鑲嵌在MOS（金屬—氧化物—半導(dǎo)體）電容結(jié)構(gòu)中應(yīng)用于非揮發(fā)性存儲器的可行性。制備了鑲嵌在氧化層中的鎳納米晶。采用電子束蒸發(fā)方法，再經(jīng)過快速退火工藝，得到平均尺寸7 nm，密度1.5×1012/cm2的鎳納米晶。電容隨頻率變化曲線發(fā)現(xiàn)明顯的峰，測試分析了電容-電壓和電導(dǎo)-電壓特性。結(jié)果表明電子通過直接隧穿停留在鎳納米晶中，并且存儲在MOS結(jié)構(gòu)中。

    Abstract:

    Recently, nanocrystal nonvolatile memory (NVM) devices using nanocrystals (NCs) have attracted great research interest. In this work, we investigated the feasibility of Ni nanocrystals embedded in metal–oxide–semiconductor (MOS) capacitor structure for NVM application. Ni NCs embedded in the gate oxide was fabricated. Ni nanocrystals with an average size of 7 nm and density of 1.5×1012 cm?2 were synthesized by e-beam evaporation technique followed by rapid thermal annealing. Distinct frequency-dependent capacitance peaks were observed. High-frequency capacitance versus voltage (C-V) and conductance versus voltage (G-V) measurements were also characterized. These results demonstrate that electrons can be loaded onto Ni nanocrystals by direct tunneling and can be stored in the fabricated MOS structure.

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倪鶴南,吳良才,宋志棠,惠 唇. Direct Tunneling and Storage of Electrons in Ni Nanocrystals Embedded within MOS Structure[J].稀有金屬材料與工程,2012,41(1):1~4.[Ni Henan, Wu Liangcai, Song Zhitang, Hui Chun. Direct Tunneling and Storage of Electrons in Ni Nanocrystals Embedded within MOS Structure[J]. Rare Metal Materials and Engineering,2012,41(1):1~4.]
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  • 收稿日期:2010-12-21
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