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分子束外延生長InGaN量子點及其結(jié)構(gòu)和光學特性
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國家自然科學基金 (20973052，61076052); 中國科學院半導體材料科學重點實驗室開放基金（KLSMS-0902）；河北科技大學基金 (QD200974)


Structures and Optical Characteristics of InGaN Quantum Dots Grown by MBE
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    摘要:

    采用射頻等離子體輔助分子束外延 (RF-MBE)技術(shù)在藍寶石襯底上，外延生長了發(fā)光波長位于407 nm的InGaN量子點結(jié)構(gòu)，研究了InN成核層技術(shù)對其結(jié)構(gòu)和光學特性的影響。材料生長過程中采用反射式高能電子衍射 (RHEED)進行了在位檢測，通過原子力顯微鏡 (AFM)，光致發(fā)光 (PL)等測試手段表征了InGaN量子點材料的結(jié)構(gòu)和光學特性。結(jié)果表明，相對于直接在GaN層上自組織生長InGaN量子點，通過InN成核層技術(shù)可以獲得高密度、高質(zhì)量的InGaN量子點結(jié)構(gòu)，量子點尺寸分布更加均勻，主要集中在35~45 nm之間；量子點的密度更高，可以達到3.2×1010/cm2；InN成核層上生長的InGaN量子點的PL發(fā)光峰強度為直接在GaN層上生長的InGaN量子點的2倍，發(fā)光峰的半高寬較窄，為10 nm

    Abstract:

    InGaN quantum dots were grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). The effects of InN nuclear layer on the structural and optical characteristics of InGaN quantum dots were studied. In-situ reflection high energy electron diffraction (RHEED) was used to analyze the growth of the InGaN dots structures. Atomic force microscope (AFM) and photoluminescence (PL) were used to characterize the structure and optical properties of the InGaN quantum dots. The results show that the InGaN quantum dots grown on the InN nuclear layer can get higher density and better quality compared with that grown directly on GaN layer. The sizes of InGaN quantum dots grown on the InN nuclear layer are more uniform, about 35-45 nm and the density can reach 3.2 × 1010/cm2. The PL intensity of the InGaN quantum dots grown on the InN nuclear layer is twice as high as that of the InGaN quantum dots grown directly on GaN layer. The FWHM of the quantum dots PL peak is about 10 nm

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王保柱,顏翠英,王曉亮.分子束外延生長InGaN量子點及其結(jié)構(gòu)和光學特性[J].稀有金屬材料與工程,2011,40(11):2030~2032.[Wang Baozhu, Yan Cuiying, Wang Xiaoliang. Structures and Optical Characteristics of InGaN Quantum Dots Grown by MBE[J]. Rare Metal Materials and Engineering,2011,40(11):2030~2032.]
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  • 收稿日期:2010-11-28
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