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Ti摻雜對(duì)VH2電子結(jié)構(gòu)影響的第一原理研究
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重慶市科技攻關(guān)計(jì)劃項(xiàng)目 (CSTC2010AC4099);重慶市自然科學(xué)基金 (CSTC2009BB4243);重慶市教委科學(xué)技術(shù)項(xiàng)目 (KJ090810);電子薄膜與集成器件國(guó)家重點(diǎn)實(shí)驗(yàn)室課題 (KFJJ200907)


First-Principle Study of the Electronic Structure of Ti-Doped VH2
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    摘要:

    采用密度泛函理論 (DFT)第一性原理的平面波超軟贗勢(shì)方法,對(duì)Ti摻雜VH2的超晶胞體系進(jìn)行了幾何結(jié)構(gòu)優(yōu)化。結(jié)果表明,隨著Ti摻雜量的增加,V1-xTixH2晶胞參數(shù)逐漸增大,體系的總能量逐漸增大,體系的穩(wěn)定性逐漸減弱,有利于改善放氫性能。對(duì)V1-xTixH2 (x = 0, 0.13, 0.30, 0.48, 0.65, 1)的電子態(tài)密度、凈電荷、鍵級(jí)以及電子密度進(jìn)行了計(jì)算和分析。計(jì)算結(jié)果表明: 隨著Ti摻雜量的增加,V的凈電荷逐漸增加,而H的凈電荷逐漸減少,V-H的離子性相互作用增強(qiáng),共價(jià)性相互作用減弱;在VH2中摻雜一定量的Ti以后,V-H之間的鍵級(jí)增大,V-H之間的相互作用增強(qiáng),從而改善吸氫性能。當(dāng)Ti含量大于0.48時(shí),V-H之間的鍵級(jí)反而減小,V-H之間的相互作用減弱,合金的吸氫性能降低

    Abstract:

    The super-cell system of Ti-doped VH2 was optimized by means of plane-wave pseudopotential, employing the first-principle of density functional theory (DFT). The results show that the cell parameters of V1-xTixH2 and total energy of the system increase gradually with the increment of Ti, so the stability of the system decreases and the capability of releasing hydrogen is improved. The density of states, net charge, bond order and electronic density of V1-xTixH2 (x = 0, 0.13, 0.30, 0.48, 0.65, 1) were also computed and analyzed. The calculation results show that the net charge of V increases whereas that of H decreases gradually with the increment of Ti; the ionic interaction between V-H is reinforced and at the same time the valent interaction is weakened; the bond order of V-H increases, the interaction between V and H becomes stronger, and thus the capability of absorbing hydrogen is improved by adding a certain amount of Ti to VH2. However, when the content of Ti in VH2 exceeds 0.48 (x>0.48), the bond order of V-H decreases, and the capability of absorbing hydrogen is decreased.

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李 榮,羅小玲,梁國(guó)明. Ti摻雜對(duì)VH2電子結(jié)構(gòu)影響的第一原理研究[J].稀有金屬材料與工程,2011,40(11):1916~1920.[Li Rong, Luo Xiaoling, Liang Guoming. First-Principle Study of the Electronic Structure of Ti-Doped VH2[J]. Rare Metal Materials and Engineering,2011,40(11):1916~1920.]
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  • 收稿日期:2010-11-24
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