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Investigation on the Electrochemical-Mechanical Polishing of NiP Substrate of Hard Disk
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Investigation on the Electrochemical-Mechanical Polishing of NiP Substrate of Hard Disk
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Project sponsored by Education Department of Anhui Province of China (KJ2009A120); National Natural Science Foundation of China (50975002)

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    摘要:

    利用自制的拋光液和改造的拋光機對NiP基板進行電化學機械拋光，研究了拋光電壓、拋光臺轉速、拋光壓力和拋光液流速對材料去除速率的影響，對電化學機械拋光的機理做了初步的分析。研究結果表明, NiP基板可以用低壓力 (3.5 kPa)拋光, 材料的去除速率可以通過調整拋光電壓, 拋光臺轉速和拋光液流速進行控制

    Abstract:

    NiP basic substrates of hard disks were polished by electrochemical-mechanical polishing (ECMP) method with home-made slurry and a modified polisher. The effects of voltage, table rotation speed, pressure and slurry flow rate on the removal rate were investigated. The electrochemical mechanical polishing mechanism was primarily analyzed. The results show that NiP substrate can be polished with ECMP method at low pressure (3.5 kPa) and the material removal rate (MRR) can be controlled by adjusting polishing voltage, rotation speed of polishing table and slurry flow rate.

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儲向峰,白林山,陳同云. Investigation on the Electrochemical-Mechanical Polishing of NiP Substrate of Hard Disk[J].稀有金屬材料與工程,2011,40(11):1906~1909.[Chu Xiangfeng, Bai Linshan, Chen Tongyun. Investigation on the Electrochemical-Mechanical Polishing of NiP Substrate of Hard Disk[J]. Rare Metal Materials and Engineering,2011,40(11):1906~1909.]
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  • 收稿日期:2010-11-25
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